위성 통신 응용을 위한 Ku-대역 3 Watt PHEMT MMIC 전력 증폭기
A Ku-band 3 Watt PHEMT MMIC Power Amplifier for satellite communication applications
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초록
본 논문에서는 위성 통신 시스템 응용을 위하여 Ku-대역에서 동작하는 3 W PHEMT MMIC 전력 증폭기의 특성을 기술한다. 3 W PHEMT MMIC 전력 증폭기는 WIN(wireless information networking) semiconductor Corp.에서 제공하는 게이트 길이가 0.25 ㎛인 GaAs 기반 PHEMT (pseudomorphic high electron mobility transistor) 공정을 사용하여 개발되었다. 개발된 Ku-대역 PHEMT MMIC 전력 증폭기는 13.75 GHz에서부터 14.5 GHz까지의 동작주파수 범위에서 22.2～23.1 dB의소신호 이득과 34.8～35.4 dBm의 포화 출력 전력을 가진다. 최대 포화 출력 전력은 13.75 GHz에서 35.4 dBm (3.47 W)이었다. 전력 부가 효율은 30.8～37.83%의 특성을 얻었으며 칩의 크기는 4.4 mm×1.9 mm이다. 개발된 PHEMT MMIC 전력 증폭기는 다양한 Ku-대역 위성 통신 시스템 응용에 적용 가능할 것으로 예상된다.
Abstract
This work describes the design and characterization of a Ku-band monolithic microwave integrated circuit (MMIC)power amplifier (PA) for satellite communication applications. The device technology used relies on 0.25 ㎛ gate lengthgallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) of wireless information networking(WIN) semiconductor foundry. The developed Ku-band PHEMT MMIC power amplifier has a small-signal gain of 22.2～23.1 dB and saturated output power of 34.8～35.4 dBm over the entire band of 13.75 to 14.5 GHz. Maximum saturatedoutput power is a 35.4 dBm (3.47 W) at 13.75 GHz. Its power added efficiency (PAE) is 30.6～37.83% and the chipdimensions are 4.4 mm×1.9 mm. The developed 3 W PHEMT MMIC power amplifier is expected to be applied in avariety of Ku-band satellite communication applications.
참고문헌 (11)
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- "MAAP-010150"[URL]
- "NDAC01038"[URL]
- "FMM5059VF"[URL]
- "HMC949"[URL]
- "TGA2505"[URL]