레이더 응용을 위한 X-대역 40W AlGaN/GaN 전력 증폭기 MMIC
A X-band 40W AlGaN/GaN Power Amplifier MMIC for Radar Applications
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다운로드
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참고문헌
키워드
초록
본 논문에서는 0.25 ㎛의 게이트를 갖는 AlGaN/GaN HEMT를 기반으로 개발된 X-대역 전력 증폭기 MMIC의 특성을 기술한다. 개발된 X-대역 전력 증폭기 MMIC는 9 GHz~10 GHz의 주파수 대역에서 21.6 dB 이상의 소신호 이득과 46.11dBm(40.83W) 이상의 출력 전력을 가진다. 전력 부가 효율 특성은 43.09%~44.47%이며 칩의 크기는 3.6 mm×4.3 mm이다. 출력 전력 밀도는 2.69 W/mm2를 나타내었다. 개발된 AlGaN/GaN 전력 증폭기 MMIC는 다양한 X-대역 레이더 응용에 적용 가능하다.
Abstract
In this paper, we present the design and characterization of a power amplifier (PA) monolithic microwaveintegrated circuit (MMIC) in the X-band. The device is designed using a 0.25 ㎛ gate length AlGaN/GaN highelectron mobility transistor (HEMT) on SiC process. The developed X-band AlGaN/GaN power amplifier MMICachieves small signal gain of over 21.6 dB and output power more than 46.11 dBm (40.83 W) in the entire bandof 9 GHz to 10 GHz. Its power added efficiency (PAE) is 43.09% ~ 44.47% and the chip dimensions are 3.6 mm ×4.3 mm. The generated output power density is 2.69 W/mm2. It seems that the developed AlGaN/GaN poweramplifier MMIC could be applicable to various X-band radar systems operating X-band.
참고문헌 (9)
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- "APA091030D"[URL]
- "CMPA801B025D"[URL]
- "TGA2624"[URL]
- "CHA8610-99F"[URL]