하이브리드 바이어스 네트워크가 적용된 W대역 60-nm GaN pHEMT 전력 증폭기
W-Band Power Amplifier with Hybrid Bias Network Using 60-nm GaN pHMET Process
1
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
본 논문에서는 바이어스 네트워크가 W 대역 전력증폭기의 성능에 미치는 영향을 고찰 하였다. 기존의 RC 및 방사형 스터브 네트워크의 성능을 살펴보고, W 대역 적용을 위하여 하이브리드 네트워크를 제안하고 그 성능을 확인 하였다. 이를 검증하기 위하여60-nm GaN pHEMT 공정을 이용하여 W 대역 전력증폭기를 설계하였다. 하이브리드 네트워크를 적용 할 경우 전력증폭기는 전주파수 대역에서 안정도가 개선되었으며, 동작 주파수 87 GHz부터 93 GHz에서 전력이득 약 9 dB를 확보하였으며, 최고 PAE는출력전력 26.7 dBm에서 약 12.3%로 확인 되었다.
Abstract
The effect of the bias network on the performance of the W-band power amplifier(PA) was investigated. Theperformances of the typical RC and radial stub networks were examined, and a hybrid network was proposed forW-band application and its performance was confirmed. To verify this, a W-band PA was designed using a 60-nmGaN pHEMT process. When hybrid networks were applied, the PA had improved stability in all frequency bands,secured about 9 dB of power gain at operating frequencies 87 GHz to 93 GHz, and the maximum PAE was foundto be about 12.3% at output power of 26.7 dBm.
참고문헌 (6)
- Kevin W. Kobayashi, "A Broadband 70–110-GHz E-", W-Band LNA Using a 90-nm T-Gate GaN HEMT Technology, 2021, pp.31(7), 885~888[DOI]
- Xiaodong Tong, "Low-Noise Amplifiers Using 100-nm Gate Length GaN-onSilicon Process in W-Band", IEEE Microwave and Wireless Components Letters, 30(10), pp.957~960 (2020), Institute of Electrical and Electronics Engineers (IEEE)[DOI]
- Li Gao, "Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI", IEEE Transactions on Microwave Theory and Techniques, 68(1), pp.132~143 (2020), Institute of Electrical and Electronics Engineers (IEEE)[DOI]
- Chia-Jen Liang, "A 0.6-V VDD W-Band Neutralized Differential Low Noise Amplifier in 28-nm Bulk CMOS", IEEE Microwave and Wireless Components Letters, 31(5), pp.481~484 (2021), Institute of Electrical and Electronics Engineers (IEEE)[DOI]
- Van-Son Trinh, "A 16.3 dBm 14.1% PAE 28-dB Gain W -Band Power Amplifier With Inductive Feedback in 65-nm CMOS", IEEE Microwave and Wireless Components Letters, 30(2), pp.193~196 (2020), Institute of Electrical and Electronics Engineers (IEEE)[DOI]
- Jiang-An Han, "A Sandwiched-Slab-Transformer-Based SiGe Power Amplifier Operating at W- and D-Bands", IEEE Microwave and Wireless Components Letters, 30(6), pp.597~600 (2020), Institute of Electrical and Electronics Engineers (IEEE)[DOI]