X-대역 응용을 위한 GaN 기반 저잡음 증폭기 MMIC
GaN-based Low Noise Amplifier MMIC for X-band Applications
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참고문헌
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초록
본 논문에서는 0.25 ㎛ 게이트 길이를 갖는 GaN HEMT 기술을 사용하여 개발한 X-대역 저잡음 증폭기 MMIC의 특성을 기술한다. 개발된 GaN 기반 X-대역 저잡음 증폭기 MMIC는 9 GHz ~ 10 GHz의 동작 주파수 대역에서 22.75 dB ~ 25.14 dB의 소신호 이득과 1.84 dB ~ 1.94 dB의 잡음지수 특성을 나타내었다. 입력 반사 손실 특성과 출력 반사 손실 특성은 각각 –11.36 dB ~ -24.49 dB, -11.11 dB ~ -17.68 dB를 얻었으며 40 dBm (10 W)의 입력 전력에 성능 열화 없이 정상적으로 동작하였다. MMIC 의 크기는 3.67 mm × 1.15 mm이다. 개발된 GaN 기반 저잡음 증폭기 MMIC는 X-대역의 다양한 응용에 적용 가능하다.
Abstract
In this paper, we report the design and the measurement of a X-band low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using a 0.25 ㎛ gate length microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology. The developed X-band GaN-based LNA MMIC achieves small signal gain of 22.75 dB ~ 25.14 dB and noise figure of 1.84 dB ~ 1.94 dB in the desired band of 9 GHz to 10 GHz. Input and output return loss values are –11.36 dB ~ -24.49 dB and -11.11 dB ~ -17.68 dB, respectively. The LNA MMIC can withstand 40 dBm (10 W) input power without performance degradation. The chip dimensions are 3.67 mm × 1.15 mm. The developed GaN-based LNA MMIC is applicable to various X-band applications
참고문헌 (12)
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- "TGA2227"[URL]
- "CGY2222UH/C2"[URL]