산화망간이 첨가된 혼합 연마제 실리카 슬러리의 산화막 CMP 특성
Chemical Mechanical Polishing Characteristics of Mixed Abrasive Silica Slurry (MAS) by adding of Manganese oxide (MnO2) Abrasive
1
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
논문에서는 1:10으로 희석된 실리카 슬러리에 산화망간(MnO2) 연마제를 첨가하여 재처리된 혼합연마제 슬러리(Mixed Abrasive Slurry; MAS)의 화학·기계적연마(CMP) 특성을 연구하였다. 최적의 연마 성능을 갖는 슬러리를 설계하기 위해서는 높은 연마율, 하부층에 대한 적절한 연마선택비, 연마 후의 낮은 표면결함, 슬러리의 안정성 등을 얻어야 한다. 산화망간이첨가된 MAS의 연마 성능은 연마율 및 비균일도와 같은 CMP 성능, 입도 분석, 표면 형상에 대해 평가하였다. 실험결과, 높은 연마율과 낮은 비균일도 측면에서 볼 때 원액 실리카 슬러리와 대등한 슬러리 특성을 얻을 수 있었다. 따라서 본 연구에서 제안하는 MnO2-MAS를 사용하면 고가의 소모재인 슬러리를 절약하는데 매우 유용할 것이다.
Abstract
In this paper, we have studied the chemical mechanical polishing(CMP) characteristics of mixed abrasive silicaslurry(MAS) retreated by adding of manganese oxide(MnO2) abrasives within 1:10 diluted silica slurry. A slurrydesigned for optimal performance should produce high removal rates, acceptable polishing selectivity with respect to theunderlying layer, low surface defects after polishing, and good slurry stability. The polishing performances of MnO2abrasive-added MAS are evaluated with respect to their particle size distribution, surface morphology, and CMPperformances such as removal rate and non-uniformity. As an experimental result, we obtained the comparable slurrycharacteristics compared to original silica slurry in the view-point of high removal rate and low non-uniformity. Therefore, our proposed MnO2-MAS can be useful to save on the high cost of slurry consumption since we used a 1:10diluted silica slurry.
참고문헌 (15)
- Y. J. Seo, "Optimization of Pre-Metal Dielectric(PMD)Materials", Journal of Materials Science: Materials in Electronics, 12(9), pp.551~554 (2001)[DOI]
- William J. Patrick, "Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections", Journal of The Electrochemical Society, 138(6), pp.1778~ (1991), The Electrochemical Society[DOI]
- W. S. Lee, "An optimization of tungsten plug chemical mechanical polishing(CMP)using different consumables", Journal of Materials Science : Materials in Electronics, 12(1), pp.63~68 (2001)[DOI]
- W. Ong, "Characterization of Inter-Metal and Pre-Metal Dielectric Oxides for Chemical Mechanical Polishing Process Integration", VMIC Conference, pp.197~ (1993)
- Yasuo Kamigata, "Why abrasive free Cu slurry is promising?", MRS Proceedings, 671, pp.M1.3~ (2001), Cambridge University Press (CUP)[DOI]
- Ronald Carpio, "Initial study on copper CMP slurry chemistries", Thin Solid Films, 266(2), pp.238~244 (1995), Elsevier BV[DOI]
- Yong-Jin Seo, "Methodological Study on the Recycle of Oxide-Chemical Mechanical Polishing Slurry", Journal of the Korean Physical Society, 50(3), pp.700~707 (2007), 한국물리학회
- S. V. Babu, "Chemicalmechanical polishing", U.S. Pat. Appl., No.US20030047710A1, ~ (2001)
- A. Jindal, "Chemical Mechanical Polishing Using Mixed Abrasive Slurries", Electrochemical and Solid-State Letters, 5(7), pp.G48~G50 (2002), The Electrochemical Society[DOI]
- S. Kishii, "Completely planarized W plugs using MnO", sub 2, Tech. Dig. Int. Electron Devices Meet., pp.1995[DOI]
- T. Hara, "Chemical mechanical polishing of copper and barrier layer by manganese(Ⅳ) oxide slurry", Electrochemical and Solid-State Letters, 4(12), pp.G109~ (2001)[DOI]
- Tohru Hara, "Chemical mechanical polishing of polyarylether low dielectric constant layers by manganese oxide slurry", J. Electrochemical Society, 146(6), pp.2333~2336 (1999), The Electrochemical Society[DOI]
- Yong-Jin Seo, "Improvements of oxide-chemical mechanical polishing performances and aging effect of alumina and silica mixed abrasive slurries", Microelectronic Engineering, 75(4), pp.361~366 (2004), Elsevier BV[DOI]
- Yong-Jin Seo, "Oxide-chemical mechanical polishing characteristics using silica slurry retreated by mixing of original and used slurry", Microelectronic Engineering, 77(3-4), pp.263~269 (2005), Elsevier BV[DOI]
- Yong-Jin Seo, "Effects of manganese oxide–mixed abrasive slurry on the tetraethyl orthosilicate oxide chemical mechanical polishing for planarization of interlayer dielectric film in the multilevel interconnection", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 26(4), pp.996~1001 (2008), American Vacuum Society[DOI]
