SiO2/TiO2 혼합입자 슬러리 SiC CMP의 재료제거율 모델링
Material Removal Rate Modeling of SiO2/TiO2 Mixed-Abrasive Slurry CMP for SiC
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초록
Silicon carbide (SiC) is used as a substrate material for power semiconductors; however, SiC chemical mechanical polishing (CMP) requires considerable time owing to its chemical stability and high hardness. Therefore, researchers are attempting to increase the material removal rate (MRR) of SiC CMP using various methods. Mixed-abrasive CMP (MAS CMP) is one method of increasing the material removal efficiency of CMP by mixing two or more particles. The aim of this research is to study the mathematical modeling of the MRR of MAS CMP of SiC with SiO2 and TiO2 particles. With a total particle concentration of 32 wt, using 80-nm SiO2particles and 25-nm TiO2 particles maximizes the MRR at 8 wt of the TiO2 particle concentration. In the case of 5 nm TiO2 particles, the MRR tends to increase with an increase in TiO2 concentration. In the case of particle size 10-25 nm TiO2, as the particle concentration increases, the MRR increases to a certain level and then decreases again. TiO2 particles of 25 nm or more continuously decreased MRR as the particle concentration increased. In the model proposed in this study, the MRR of MAS CMP of SiC increases linearly with changes in pressure and relative speed, which shows the same result as the Preston's equation. These results can contribute to the future design of MAS; however, the model needs to be verified and improved in future experiments.
Abstract
Silicon carbide (SiC) is used as a substrate material for power semiconductors; however, SiC chemical mechanical polishing (CMP) requires considerable time owing to its chemical stability and high hardness. Therefore, researchers are attempting to increase the material removal rate (MRR) of SiC CMP using various methods. Mixed-abrasive CMP (MAS CMP) is one method of increasing the material removal efficiency of CMP by mixing two or more particles. The aim of this research is to study the mathematical modeling of the MRR of MAS CMP of SiC with SiO2 and TiO2 particles. With a total particle concentration of 32 wt, using 80-nm SiO2particles and 25-nm TiO2 particles maximizes the MRR at 8 wt of the TiO2 particle concentration. In the case of 5 nm TiO2 particles, the MRR tends to increase with an increase in TiO2 concentration. In the case of particle size 10-25 nm TiO2, as the particle concentration increases, the MRR increases to a certain level and then decreases again. TiO2 particles of 25 nm or more continuously decreased MRR as the particle concentration increased. In the model proposed in this study, the MRR of MAS CMP of SiC increases linearly with changes in pressure and relative speed, which shows the same result as the Preston's equation. These results can contribute to the future design of MAS; however, the model needs to be verified and improved in future experiments.
참고문헌 (8)
- Hyunseop Lee, "Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A review", International Journal of Precision Engineering and Manufacturing-Green Technology, 9(1), pp.349~367 (2022), 한국정밀공학회[DOI]
- 이현섭, "자외선 광을 활용하는 화학기계적 연마에 관한 연구 동향", 한국트라이볼로지학회지, 38(6), pp.247~254 (2022), 한국트라이볼로지학회
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- Qin, K., "A chemical mechanical polishing model incorporating both the chemical and mechanical effects", Thin Solid Films, 446, pp.277~286 (2004)
- Greenwood, J.A., "Contact of Nominally Flat Surfaces", Proceedings of the Royal Society of London A : Mathematical, Physical and Engineering Sciences, 95, pp.300~319 (1966)