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슬러리 공급 시스템을 이용한 화학적 기계적 연마 공정에서의POU 필터의 성능 평가

Evaluation of Point‐Of‐Use (POU) Filters Performance in Chemical Mechanical Polishing Slurry Supply System

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초록

The chemical mechanical polishing (CMP) process is widely used in semiconductor manufacturing process forplanarization of various materials and structures. Point‐of‐use (POU) filters are used in most of the CMP processes inorder to reduce the unwanted micro‐scratches which may result in defects. The performance of the POU filter isdepends on type and size of the abrasives used during cleaning process. For this reason, there is a need to evaluatePOU filters for their filtration efficiency (FE) with different types of abrasives. In this study, we developed filter testsystem to evaluate the FE of POU using ceria and silica abrasives (slurry). The POU filter is roll type capsule filterwith retention size of 0.2 ㎛. Two POU filters of different make are evaluated for FE. We observed that both POUfilters show similar filtration efficiency for silica and ceria slurry. Results reveal that the ceria slurry and the colloidalsilica particle are removed not only by mechanical way but also hydrodynamic and electrostatic interaction way

Abstract

The chemical mechanical polishing (CMP) process is widely used in semiconductor manufacturing process forplanarization of various materials and structures. Point‐of‐use (POU) filters are used in most of the CMP processes inorder to reduce the unwanted micro‐scratches which may result in defects. The performance of the POU filter isdepends on type and size of the abrasives used during cleaning process. For this reason, there is a need to evaluatePOU filters for their filtration efficiency (FE) with different types of abrasives. In this study, we developed filter testsystem to evaluate the FE of POU using ceria and silica abrasives (slurry). The POU filter is roll type capsule filterwith retention size of 0.2 ㎛. Two POU filters of different make are evaluated for FE. We observed that both POUfilters show similar filtration efficiency for silica and ceria slurry. Results reveal that the ceria slurry and the colloidalsilica particle are removed not only by mechanical way but also hydrodynamic and electrostatic interaction way

참고문헌 (12)

  1. K Nicholes, "Measuring Particles in CMP Slurries", Semiconductor International, pp.201~206 (2001)
  2. Y.J Seo, , Proceeding of Chemical Mechanical Planarization for ULSI Multilevel Interconnection Conference (CMP– MIC), pp.527~ (2001), IMIC (Institute for Microelectronics Inter‐Connections)
  3. Y.J Seo, "Effects of slurry filter size on the chemical mechanical polishing (CMP) defect density", Materials Letters, 58, pp.2091~2095 (2004)
  4. J.C Yang, "Study of Polishing Characteristics of Monodisperse Ceria Abrasive in Chemical Mechanical Planarization", Journal of The Electrochemical Society, 157(3), pp.H235~H240 (2010)
  5. H Kim, "Effects of Ceria Abrasive Particle Size Distribution below Wafer Surface on In‐Wafer Uniformity during Chemical Mechanical Polishing Processing", Journal of The Electrochemical Society, 158(6), pp.H635~H640 (2011)
  6. H.G Kim, "Frictional Characteristic of Polymeric Additive for the Slurry of Chemical Mechanical Planarization Process", ECS Journal of Solid State Science and Technology, 1(3), pp.P101~P106 (2012)
  7. G Vasilopoulos, "Copper CMP Defect Reduction using POU Filtration", Proc. of CMP Technology for ULSI Interconnection, Semicon West 2000, pp.s‐1~S‐7 (2000)
  8. Effective Filtration of Chemical Mechanical Planarization Slurries, "R. K Singh", IEEE, ~, pp.IEEE, 0‐7803‐ 8312‐5 (2004), 04
  9. D Lim, "THE EVALUTION OF CERIA BASED SLURRIES FOR ITS PARICLE SIZE DISTRIBUTION DURING FILTRATION PROCESS", International Conference on Planarization, 2010, ~
  10. Study on the Evaluation Method of Point‐of‐use Filter Performance, "S Jang", Korea Chemical Mechanical Polishing User Group Meeting (KOCMPUGM), ~ (2012)
  11. Liquid Separation, "Solid", pp.2005, R. J. Wakeman
  12. R. C. Flagan, "Aerosol Science Technology" (1998), JOHN WILEY & SONS,INC

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