텅스텐 CMP 연마액에서 산화제와 첨가제가 연마 성능에 미치는 영향
Effect of oxidants and additives on the polishing performance in tungsten CMP slurry
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Abstract
The polishing performance and the relationships of electrochemistry depending upon oxidizers andadditives in the tungsten CMP slurry used in semiconductor industry were investigated. Hydrogen peroxide,ferric nitrate and potassium iodate were used as oxidizers and they showed different oxidation reactions ontungsten film depending on the kind of oxidizers and pH of slury. The differences influenced the polishingperformance. Etching reaction was predominated in the hydrogen peroxide. However, passivation reaction wasof tungsten, and improved a dispersion characteristic of slury by increasing absolute value of zeta potential.Addition of 100 ppm of poly(acrylic acid) of M.W. 250,000 improved dispersion ability.
참고문헌 (10)
- Preston, F, "J. the society of glass technology", 11, pp.214~ (1972)
- Ziomek-Moroz, M, "Wear", 255, pp.869~ (2003)
- Ernur, D, "J. Electroche. soc.", 152, pp.512~ (2005)
- Yang, K, "Mat. Res. Soc. Symp. Proc.", 337, pp.145~ (1994)
- Kaufman, F.B, "J. Electrochem. Soc.", 138, pp.3460~ (1991)
- Lim, G, "J. Electrochem. Soc.", 153, pp.169~ (2006)
- Stein, D.J, "J. Electrochem. Soc.", 144, pp.3190~ (1998)
- Ernur, D, "J. Electrochem. Soc.", 152, pp.12~ (2005)
- Pourbaix, M, "Atrlas of Electrochemical Equilibria in Aqueous Solutions" (1974), NACE, Houstonn, TX
- Palla, B.J, "J. Colloid and Interface Science", 223, pp.102~ (2000)