게이트 절연막 조성에 따른 a-ITGZO 박막트랜지스터의전기적 특성 연구
Effect of Gate Dielectrics on Electrical Characteristics of a-ITGZO Thin-Film Transistors
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본 연구에서는 HfO2와 Al2O3 비율을 조절하여 게이트 절연막을 구성하고, 게이트 절연막에 따른 a-ITGZO 박막트랜지스터의 전기적 특성을 분석하였다. HfO2 게이트 절연막, HfO2와 Al2O3 비율이 2:1인 게이트 절연막, HfO2와 Al2O3 비율이 1:1인게이트 절연막으로 구성된 a-ITGZO 박막트랜지스터의 전자이동도는 각각 32.3, 26.4, 16.8 cm2/Vs이고 SS 값은 각각 206,160, 173 mV/dec 이며 히스테리시스 윈도우 폭은 각각 0.60, 0.12, 0.09 V 이었다. 게이트 절연막에서 Al2O3 비율이 높아질수록 a-ITGZO 박막트랜지스터의 히스테리시스 윈도우 폭이 감소했는데, 이는 Al2O3 비율이 높아질수록 게이트 절연막과 채널박막 사이의 interface trap density가 감소했기 때문이다.
Abstract
In this study, we fabricated amorphous indium-tin-gallium-zinc-oxide thin-film transistors (a-ITGZO TFTs) withgate dielectrics of HfO2 and the mixed layers of HfO2 and Al2O3, and investigated the effect of gate dielectric on electricalcharacteristics of a-ITGZO TFTs. When only HfO2 was used as the gate dielectric, the mobility and subthreshold swing(SS) were 32.3 cm2/Vs and 206 mV/dec. For the a-ITGZO TFTs with gate dielectric made of HfO2 and Al2O (2:1, 1:1),the mobilities and SS were 26.4 cm2/Vs (2:1), 16.8 cm2/Vs(1:1), 160 mV/dec (2:1) and 173 mV/dec (1:1). On the otherhand, the hysteresis window shown in transfer curves of the a-ITGZO TFTs was lessened from 0.60 to 0.09 V by theincrease of Al2O3 ratio in gate dielectric, indicating that the interface trap density between the gate dielectric and channellayer decreases due to Al2O3.
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