Si(100) wafer와 SiO2/Si(100) 기판에 동시 스퍼터링법으로 증착된 NiFe 합금 박 막의 상변화 및 자기적 특성
Phase transformation and magnetic properties of NiFe thin films on Si(100) wafer and SiO2/Si(100) substrate by co-sputtering
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Si(100) wafer와 SiO2/Si(100) 웨이퍼에 증착된 NiFe 합금 박막의 결정상과 자기적 특성을 비교하고자 동시 스퍼터링법을 이용하여 두 기판 위에 150 nm의 박막을 제조하여 그의 상변화와 자기적 특성을 XRD, FE-SEM, VSM으로 비교하였다. 두 기판 위에 증착된 NiFe 박막은 BCC상으로 증착되었으나 400oC에서 2시간 열처리를 한 결과 BCC에서 FCC로의 상전이가 일어나는 것을 관찰 할 수 있었으며 Si(100) wafer위에 증착된 박막에서는 500oC에서 열처리 후에도 BCC와FCC가 혼재하여 나타나는 것을 알 수 있었다. 450oC에서 열처리 하였을 때 각형비가 가장 높았으며 포화자화는 0.0118emu로 나타나고 있었다. 500oC 이상의 온도에서는 상전이로 인해 포화자화가 급격히 감소하는 것을 볼 수 있었다.
Abstract
Ni-Fe alloys have various applications such as thin film inductor, thin film transformer, magnetic head’s shield case, etc. Magnetic properties of Ni-Fe thin films depend on the process parameters such as thickness, contents, deposition rate, substrates, etc. In this study, NiFe films with a thickness of about 150nm were deposited on Si(100) wafer and SiO2/Si(100) substrate at room temperature by a DC magnetron co-sputtering using Fe and Ni targets. Their phase formation and magnetic properties as a function of annealing temperature were investigated with XRD, FE-SEM and VSM. The assputtered films have BCC structure. With increasing annealing temperature, NiFe thin film for SiO2/Si(100) substrate transformed completely from BCC to FCC phase above 500oC, but some BCC phase remained above 500oC on Si(100)wafer. For samples annealed at 450oC, squareness ratio of NiFe thin film shows peak value and its saturation magnetization is around 0.0118 emu, which means that the optimum annealing temperature of NiFe thin film seems to be 450oC. The saturation magnetization of films decreased rapidly above the annealing temperature of 500oC due to phase transformation from BCC to FCC phase.
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