펄스 레이저 어블레이션을 이용한 비정질 GaN 박막의 성장 및 특성분석
Growth and characterization of amorphous GaN film using a pulsed-laser ablation
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GaN GaN . Ar ! " #$ %&' ()*+, " -./ 01, 10 Pa ! %&' 2 smooth () 34 GaN ,-567 89 :, ;< 200 mJ/pulse %&' 2 #$ %&' 1 => 0- %? " @A B ?CD - EF . photoluminescence spectraGH GaN 2 I 2.8 eV J band gap KL;- MN56 :, 200 mJ/pulse 10 Pa ?O P2 KLQR EF .
Abstract
Amorphous GaN film was deposited using a laser ablation of the highly densified GaN target. Through the surface morphological and compositional analysis of films deposited under various laser energies and Ar gas pressures, the film deposited under the pressure of 10 Pa were found to be amorphous GaN with the smooth surface. In particular, the film at 200 mJ/pulse showed the enhanced crystallinity and stoichiometric composition, compared with those of the films at relatively lower laser energy. The strong band-gap emission at 2.8 eV was observed from amorphous GaN film in the room temperature photoluminescence spectra, showing the highest efficiency in the film at 200 mJ/pulse under 10 Pa.
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