펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 가전자대 갈라짐에 대한 광전류 연구
Growth of ZnO thin film by pulsed laser deposition and photocurrent study on the splitting of valance band
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Abstract
ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on Al2O3 substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire (Al2O3) substrate at a temperature of 400oC. The crystalline structure of epilayer was investigated by the photolumine- scence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.271016cm3 and 299cm2/V·s at 293K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, Eg(T)=3.3973eV(2.69104 eV/K)T2/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041eV and 0.0399eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the so definitely exists in the 6 states of the valence band of the ZnO. The three photocurrent peaks observed at 10K are ascribed to the A1-, B1-, and C1-exciton peaks for n=1.
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