RF-PECVD법에 의해 증착된 DLC 박막의 결합 특성
Bonding structure of the DLC films deposited by RF-PECVD
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GaN GaN . Ar ! " #$ %&' ()*+, " -./ 01, 10 Pa ! %&' 2 smooth () 34 GaN ,-567 89 :, ;< 200 mJ/pulse %&' 2 #$ %&' 1 => 0- %? " @AB ?CD - EF. photoluminescence spectraGH GaN 2 I 2.8 eV J band gap KL;- MN56 :, 200 mJ/pulse 10 Pa ?O P2 KLQR EF.
Abstract
Amorphous GaN film was deposited using a laser ablation of the highly densified GaN target. Through the surface morphological and compositional analysis of films deposited under various laser energies and Ar gas pressures, the film deposited under the pressure of 10 Pa were found to be amorphous GaN with the smooth surface. In particular, the film at 200 mJ/pulse showed the enhanced crystallinity and stoichiometric composition, compared with those of the films at relatively lower laser energy. The strong band-gap emission at 2.8 eV was observed from amorphous GaN film in the room temperature photoluminescence spectra, showing the highest efficiency in the film at 200 mJ/pulse under 10 Pa.
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