분말 스퍼터링과 후열처리 복합 공정으로 제조한 주석 함유 갈륨 산화물 다공성 나노와이어
Porous Sn-incorporated Ga2O3 nanowires synthesized by a combined process of powder sputtering and post thermal annealing
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라디오주파수 분말 스퍼터링 방법으로 sapphire (0001) 기판 위에 Sn을 함유한 β-Ga2O3(β-Ga2O3 : Sn) 나노와이어를 증착하였다. 후열처리 공정의 가스 분위기가 나노와이어 형상의 변화에 미치는 영향을 연구하였다. 800°C에서 진공중 열처리 과정에서, as-grown 나노와이어는 다공성 구조로 전이하였다. 비화학양론 Ga2O3-x는 화학양론 Ga2O3로 바뀌고,Sn원자는 응집하여 나노클러스터를 형성한다. Sn 나노클러스터는 증발하여 Sn 원자의 함량은 1.31에서 0.27 at%로 감소하였다. Sn원자의 증발로 인하여 나노와이어 표면에 다수의 기공이 형성되고, 이는 β-Ga2O3 : Sn 나노와이어의 체적대비 표면적 비율을 증가시킨다.
Abstract
We investigated the post-annealing effect of Sn-incorporated β-Ga2O3 (β-Ga2O3 : Sn) nanowires (NWs) grown onsapphire (0001) substrates using radio-frequency powder sputtering. The β-Ga2O3 : Sn NWs were converted to a porousstructure during the vacuum annealing process at 800°C. Host non-stoichiometric Ga2O3-x, is transformed into stoichiometric Ga2O3, where Sn atoms separate and form Sn nano-clusters that gradually evaporate in a vacuum atmosphere. As a result,the amount of Sn atoms was reduced from 1.31 to 0.27 at%. Pores formed on the sides of β-Ga2O3 : Sn NWs were observed. This increases the ratio of the surface to the volume of β-Ga2O3 : Sn NWs.
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