ε-Ga2O3 박막의 성장과 상전이를 이용한 고품질 β-Ga2O3 박막의 제조
Growth of ε-Ga2O3 film and fabrication of high quality β-Ga2O3 films by phase transition
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초록
Ga2O3의 준 안정상인 ε-Ga2O3는 육각형 구조나 준 육각형 구조를 가지는 기판들과 정합성이 우수하여 β-Ga2O3보다 상대적으로 쉽게 낮은 표면 거칠기와 결함 밀도를 갖는 박막을 얻을 수 있다. 이에 ε-Ga2O3를 고온에서 열처리하면 β-Ga2O3로 상전이 되는 특성을 이용하여 표면 거칠기와 결함 밀도가 낮은 고품질 β-Ga2O3 박막의 제조를 시도하였다. 이를 위해서는 고품질 ε-Ga2O3 박막의 성장이 선행되어야 하므로 본 연구에서는 갈륨과 산소의 공급 유량 비율에 따른 Ga2O3 박막의 구조적, 형태적 특성을 분석함으로써 최적의 유량 비율을 조사하였다. 추가로 열처리 조건과 ε-Ga2O3 박막에 혼입된 β-Ga2O3가 상전이 이후 β-Ga2O3의 결정성에 미치는 영향도 함께 조사하였다.
Abstract
ε-Ga2O3, a metastable phase of Ga2O3, has excellent compatibility with substrates having a hexagonal structureor a quasi-hexagonal structure, so that a film having a relatively lower surface roughness and defect density than β-Ga2O3can be obtained easily. Accordingly, we attempted to fabricate a high-quality β-Ga2O3 film with a low surface rough nessand defect density using the property of phase transition to β-Ga2O3 when ε-Ga2O3 is annealed at a high temperature. Forthis, the growth of high-quality ε-Ga2O3 films must be preceded. In this study, the optimal flow rate was investigated byanalyzing the structural and morphological characteristics of the ε-Ga2O3 film according to the supplied precursor ratio. Inaddition, the annealing condition and the effect of β-Ga2O3 mixed in the ε-Ga2O3 film on the crystallinity of β-Ga2O3 afterphase transition were also investigated.
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