비정질과 결정질 V2O5 박막의 온도에 따른 발광특성
Temperature-dependent photoluminescence properties of amorphous and crystalline V2O5 films
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V2O5 박막에서의 PL 특성을 조사하기 위해 RF 스퍼터링법을 이용하여 비정질과 결정질 V2O5 박막을 제작하였고, 10~300 K의 온도까지 PL 스펙트럼을 측정하였다. 상온에서 성장된 비정질 박막에서는 ~505 nm를 중심으로 하는 하나의 PL 피크만이 관찰되었고, 결정질 V2O5 박막에서는 505 nm를 중심으로 하는 피크와 산소결함에 의한 것으로 알려진~695 nm를 중심으로 하는 피크가 관찰되었다. 비정질과 결정질 V2O5 박막에서 관찰되는 505 nm에서의 PL 피크의 위치는온도에 강한 의존성을 보였고, 그 값은 300 K에서 2.45 eV였고, 10 K에서 2.35 eV였다. 505 nm에서의 PL은 V2O5에서의 밴드 에너지 전이에 의한 것이었으며, 또한 온도의 감소에 따른 피크 위치 에너지의 감소는 전자-포논 상호작용의 감소에 의한 격자팽창효과의 감소 때문이었다.
Abstract
In order to investigate the photoluminescence (PL) properties of V2O5 films, amorphous and crystalline filmswere prepared by using RF sputtering system, and the PL spectra of the films were measured at the temperatures rangingfrom 300 K to 10 K. In the amorphous V2O5 film grown at room temperature, a PL peak centered at ~505 nm was onlyobserved, and in the crystalline V2O5 film, two peaks centered at ~505 nm and ~695 nm, which is known to correspond tooxygen defects, were revealed. The position of PL peak centered at 505 nm for both the amorphous and crystalline V2O5films showed a strong dependence on temperature, and the positions were 2.45 eV at 300 K and 2.35 eV at 10 K,respectively. The PL at 505 nm was due to the band energy transition in V2O5, and also, the reduction of the peak positionenergy with decreasing temperature was caused by a decrement of the lattice dilatation effect with reducing electron-phononinteraction.
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