증착 온도가 라디오파 마그네트론 스퍼터링으로 성장한 SnO2:Eu3+ 박막의 특성에 미치는 영향
Effects of deposition temperature on the properties of SnO2:Eu3+ thin films grown by radio-frequency magnetron sputtering
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Eu3+-doped SnO2 (SnO2:Eu3+) phosphor thin films were grown on quartz substrates by radio-frequency magnetron sputtering. The deposition temperature was varied from 100 to 400 ℃. The X-ray diffraction patterns showed that all the thin films had two mixed phases of SnO2 and Eu2Sn2O7. The 880 nmthick SnO2:Eu3+ thin film grown at 100 ℃ exhibited numerous pebble-shaped particles. The excitation spectra of SnO2:Eu3+ thin films consisted of a strong and broad peak at 312 nm in the vicinity from 250 to 350 nm owing to the O2-–Eu3+ charge transfer band, irrespective of deposition temperature. Upon 312 nm excitation, the SnO2:Eu3+ thin films showed a main emission peak at 592 nm arising from the 5D0→7F1 transition and a weak 615 nm red band originating from the 5D0→7F2 transition of Eu3+. As the deposition temperature increased, the emission intensities of two bands increased rapidly, approached a maximum at 100 ℃, and then decreased slowly at 400 ℃. The thin film deposited at 200 ℃ exhibited a band gap energy of 3.81 eV and an average transmittance of 73.7% in the wavelength range of 500– 1100 nm. These results indicate that the luminescent intensity of SnO2:Eu3+ thin films can be controlled by changing the deposition temperature.
Abstract
Eu3+-doped SnO2 (SnO2:Eu3+) phosphor thin films were grown on quartz substrates by radio-frequency magnetron sputtering. The deposition temperature was varied from 100 to 400 ℃. The X-ray diffraction patterns showed that all the thin films had two mixed phases of SnO2 and Eu2Sn2O7. The 880 nmthick SnO2:Eu3+ thin film grown at 100 ℃ exhibited numerous pebble-shaped particles. The excitation spectra of SnO2:Eu3+ thin films consisted of a strong and broad peak at 312 nm in the vicinity from 250 to 350 nm owing to the O2-–Eu3+ charge transfer band, irrespective of deposition temperature. Upon 312 nm excitation, the SnO2:Eu3+ thin films showed a main emission peak at 592 nm arising from the 5D0→7F1 transition and a weak 615 nm red band originating from the 5D0→7F2 transition of Eu3+. As the deposition temperature increased, the emission intensities of two bands increased rapidly, approached a maximum at 100 ℃, and then decreased slowly at 400 ℃. The thin film deposited at 200 ℃ exhibited a band gap energy of 3.81 eV and an average transmittance of 73.7% in the wavelength range of 500– 1100 nm. These results indicate that the luminescent intensity of SnO2:Eu3+ thin films can be controlled by changing the deposition temperature.
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