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Hg1-xCdxTe를 이용한 64×1 선형 적외선 감지 소자 제작

Fabrication of 64×1 linear array infrared detector using Hg1-xCdxTe

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초록

64×1 forcal plane infrared detector has been fabricated by using HgCdTe epi layer. HgCdTe was grown on GaAs substrate by using metal organic chemical vapor deposition. This paper describes key developments in the epi layer growth and device fabrication process. The performance of IR imaging system is summarized.

Abstract

64×1 forcal plane infrared detector has been fabricated by using HgCdTe epi layer. HgCdTe was grown on GaAs substrate by using metal organic chemical vapor deposition. This paper describes key developments in the epi layer growth and device fabrication process. The performance of IR imaging system is summarized.

참고문헌 (6)

  1. Antoni Rogalski, "Heterostructure infrared photovoltaic detectors", Infrared Physics & Technology, 41, pp.213~238 (2000)
  2. 김병혁, , 응용물리, 11, pp.S175~ (1998)
  3. 허옥명, , 응용물리, 12, pp.S62~ (1999)
  4. J. Tunnicliffe, "A new MOVPE technique for the growth of highly uniform CMT", J. Crystal Growth, 68, pp.245~253 (1984)
  5. S-H Suh, "Metalorganic vapor phase epitaxial growth of hillock free (100) HgCdTe", GaAs with good electrical properties, 1996, pp.159, 1132~1135
  6. G. N. Pain, "Low temperature MOCVD of Hg1−xCdxTe on 311, 511, 711 and shaped GaAs", J. Crystal Growth, 107, pp.610~620 (1991)

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