Optoelectrical Properties of HgCdTe Epilayers Grown by Hot Wall Epitaxy

Abstract

Hg1-xCdxTe (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) bufer layer was grownon the GaAs substrate at the temperature of 590oC for 15 min. When the thickness of the CdTe bufer layer was 5mmor thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantlydecrease. After a good quality CdTe bufer layer was grown, the MCT epilayers were grown on the CdTe (111)/GaAssubstrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-rayrocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured.The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from thetemperature dependence of the energy band gap were turned out.