UV Photodetection Enhancement of UV/O3-treated AlGaN/GaN Schottky HEMTs
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Enhanced UV photodetection in AlGaN/GaN Schottky high-electron-mobility transistors (HEMTs) was achievedthrough UV/O3 surface treatment. The treatment effectively removes donor-like surface traps, mitigating two-dimensionalelectron gas depletion and enabling efficient injection of photogenerated carriers. Under 260 nm illumination,UV/O3-treated HEMT exhibits improvement in photocurrent modulation, including increases in responsivity from7.81×103 A/W to 9.47×104 A/W, photo-to-dark-current ratio from 1.02×101 to 1.72×102, and detectivity from1.18×1013 Jones to 1.69×1014 Jones. These results demonstrate a simple, CMOS-compatible approach for boostingUV sensitivity in wide-bandgap HEMT photodetectors.
Abstract
Enhanced UV photodetection in AlGaN/GaN Schottky high-electron-mobility transistors (HEMTs) was achievedthrough UV/O3 surface treatment. The treatment effectively removes donor-like surface traps, mitigating two-dimensionalelectron gas depletion and enabling efficient injection of photogenerated carriers. Under 260 nm illumination,UV/O3-treated HEMT exhibits improvement in photocurrent modulation, including increases in responsivity from7.81×103 A/W to 9.47×104 A/W, photo-to-dark-current ratio from 1.02×101 to 1.72×102, and detectivity from1.18×1013 Jones to 1.69×1014 Jones. These results demonstrate a simple, CMOS-compatible approach for boostingUV sensitivity in wide-bandgap HEMT photodetectors.