Surface Passivation Method for GaN UV Photodetectors UsingOxygen Annealing Treatment
1
조회
0
다운로드
1
인용
0
참고문헌
키워드
초록
Epitaxially grown GaN layers have a high surface state density, which typically results in a surface leakage current and a pho-toresponse in undesirable wavelengths in GaN optoelectronic devices. Surface passivation is, therefore, an important process necessaryto prevent performance degradation of GaN UV photodetectors. In this study, we propose oxygen-enhanced thermal treatment as a sim-ple surface passivation process without capping layers. The GaN UV photodetector fabricated using a thermal annealing process exhibitsimproved electrical and photoresponsive characteristics such as a reduced dark current and an enhanced photoresponsive current andUV-to-visible rejection ratio. The results of this study show that the proposed surface passivation method would be useful to enhancethe reliability of GaN-based optoelectronic devices.
Abstract
Epitaxially grown GaN layers have a high surface state density, which typically results in a surface leakage current and a pho-toresponse in undesirable wavelengths in GaN optoelectronic devices. Surface passivation is, therefore, an important process necessaryto prevent performance degradation of GaN UV photodetectors. In this study, we propose oxygen-enhanced thermal treatment as a sim-ple surface passivation process without capping layers. The GaN UV photodetector fabricated using a thermal annealing process exhibitsimproved electrical and photoresponsive characteristics such as a reduced dark current and an enhanced photoresponsive current andUV-to-visible rejection ratio. The results of this study show that the proposed surface passivation method would be useful to enhancethe reliability of GaN-based optoelectronic devices.
참고문헌 (12)
- C. K. Wang, "High detectivity GaN metal-semiconductor-metal UV photodetectors with transparent tungsten electrodes", Semicond. Sci. Technol, 20(6), pp.485~489 (2005)
- T. K. Ko, "AlGaN", GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers, 2006, pp.21(8), 1064~1068
- M. L. Tu, "GaN UV photodetector by using transparency antimony-doped tin oxide electrode", Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy, 298, pp.744~747 (2007)
- P. C. Chang, "AlGaN", GaN MSM photodetectors with photo-CVD annealed Ni, Semicond. Sci. Technol, pp.2004, 19(12)[DOI]
- K. H. Lee, "Characterization of AlGaN-GaN Metal-Semiconductor-Metal Photodetectors with a Low-Temperature AlGaN Interlayer", IEEE Sensors Journal, 9(6), pp.723~727 (2011)
- A. Muller, "Ultraviolet MSM Photodetector Based on GaN Micromachining", 2008 International Semiconductor Conference, 1, pp.91~94 (2008)
- X. Y. Wang, "High responsivity ultraviolet photodetector based on crack-free GaN on Si(111)", Phys. Stat. Sol. (c), 4(5), pp.1613~1616 (2007)
- J. K. Sheu, "Nitride-Based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer", Journal of Elec. Materials, 32(5), pp.400~402 (2003)
- C. K. Wang, "GaN MSM UV Photodetector with Sputtered AlN Nucleation Layer", IEEE Sensors Journal, 15(9), pp.4743~4748 (2015)
- C. J. Lee, "Hybrid UV Active Pixel Sensor Implemented Using GaN MSM UV Sensor and Si-Based Circuit", IEEE Sensors Journal, 15(9), pp.5071~5074 (2015)
- W. Y. Weng, "A β-Ga2O3", GaN Hetero-Structured Solar-Blind and Visible-Blind Dual-Band Photodetector, 2011, pp.11(6), 1491~1492
- 이창주, "Body-bias Effect in a GaN Schottky Barrier MOSFET Fabricated on a Silicon (111) Substrate with an ITO Source", Drain, 2011, pp.59(2), 294~297[DOI]