Asymmetric Metal–Semiconductor–Metal Al0.24Ga0.76N UV Sensors with Surface Passivation Effect Under Local Joule Heating
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An asymmetric metal–semiconductor–metal Al0.24Ga0.76N ultraviolet (UV) sensor was fabricated, and the effects of local Joule heatingwere investigated. After dielectric breakdown, the current density under a reverse bias of 2.0 V was 1.1×10-9 A/cm2 , significantly lower than 1.2×10-8 A/cm2before dielectric breakdown; moreover, the Schottky behavior of the Ti/Al/Ni/Au electrode changed to ohmic behavior under forward bias. The UV-to-visible rejection ratio (UVRR) under a reverse bias of 7.0 V before dielectric breakdown was 87; however, this UVRR significantly increased to 578, in addition to providing highly reliable responsivity. Transmission electronmicroscopy revealed interdiffusion between adjacent layers, with nitrogen vacancies possibly formed owing to local Joule heating at theAlGaN/Ti/Al/Ni/Au interfaces. X-ray photoelectron microscopy results revealed decreases in the peak intensities of the O 1s binding energies associated with the Ga–O bond andOH-, which act as electron-trapping states on the AlGaN surface. The reduction in darkcurrent owing to the proposed local heating method is expected to increase the sensing performance of UV optoelectronic integrated devices, such as active-pixel UV image sensors.
Abstract
An asymmetric metal–semiconductor–metal Al0.24Ga0.76N ultraviolet (UV) sensor was fabricated, and the effects of local Joule heatingwere investigated. After dielectric breakdown, the current density under a reverse bias of 2.0 V was 1.1×10-9 A/cm2 , significantly lower than 1.2×10-8 A/cm2before dielectric breakdown; moreover, the Schottky behavior of the Ti/Al/Ni/Au electrode changed to ohmic behavior under forward bias. The UV-to-visible rejection ratio (UVRR) under a reverse bias of 7.0 V before dielectric breakdown was 87; however, this UVRR significantly increased to 578, in addition to providing highly reliable responsivity. Transmission electronmicroscopy revealed interdiffusion between adjacent layers, with nitrogen vacancies possibly formed owing to local Joule heating at theAlGaN/Ti/Al/Ni/Au interfaces. X-ray photoelectron microscopy results revealed decreases in the peak intensities of the O 1s binding energies associated with the Ga–O bond andOH-, which act as electron-trapping states on the AlGaN surface. The reduction in darkcurrent owing to the proposed local heating method is expected to increase the sensing performance of UV optoelectronic integrated devices, such as active-pixel UV image sensors.
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