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원자층증착법으로 증착된 강유전성 플루오라이트 구조 강유전체 박막의 불순물 효과

A brief review on the effect of impurities on the atomic layer deposited fluorite-structure ferroelectrics

양건|박주용|박민혁|이동현
한국표면공학회 (The Korean Society of Surface Science and Engineering)|2020.08|한국표면공학회지 (Journal of Surface Science and Engineering)|제53권 제4호|pp. 169-181|DOI 10.5695/JKISE.2020.53.4.169

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참고문헌

키워드

FerroelectricZrO2PolymorphismImpurityHfO2
주제분류기계공학

초록

The ferroelectricity in emerging fluorite-structure oxides such as HfO2 and ZrO2 has attracted increasing interest since 2011. Different from conventional ferroelectrics, the fluorite-structure ferroelectrics could be reliably scaled down below 10 nm thickness with established atomic layer deposition technique. However, defects such as carbon, hydrogen, and nitrogen atoms in fluorite-structure ferroelectrics are reported to strongly affect the nanoscale polymorphism and resulting ferroelectricity. The characteristic nanoscale polymorphism and resulting ferroelectricity in fluorite-structure oxides have been reported to be influenced by defect concentration. Moreover, the conduction of charge carriers through fluorite-structure ferroelectrics is affected by impurities. In this review, the origin and effects of various kinds of defects are reviewed based on existing literature.

Abstract

The ferroelectricity in emerging fluorite-structure oxides such as HfO2 and ZrO2 has attracted increasing interest since 2011. Different from conventional ferroelectrics, the fluorite-structure ferroelectrics could be reliably scaled down below 10 nm thickness with established atomic layer deposition technique. However, defects such as carbon, hydrogen, and nitrogen atoms in fluorite-structure ferroelectrics are reported to strongly affect the nanoscale polymorphism and resulting ferroelectricity. The characteristic nanoscale polymorphism and resulting ferroelectricity in fluorite-structure oxides have been reported to be influenced by defect concentration. Moreover, the conduction of charge carriers through fluorite-structure ferroelectrics is affected by impurities. In this review, the origin and effects of various kinds of defects are reviewed based on existing literature.

참고문헌 (48)

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