반응성 RF 마그네트론 스퍼터링법으로 증착한 질화티타늄 박막 특성
Characteristics of Titanium Nitride Thin Films by Using Reactive Radio Frequency Magnetron Sputtering Method
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TiN has been attracting attention as an attractive material in many research fields due to its low cost, high melting point (about 3000°C), high mechanical hardness, high electrical conductivity (>105 S/m), chemical stability, and corrosion resistance. TiN thin films are generally formed using various deposition methods. However, in most methods, the Ti/N ratio and growth direction change significantly as the pressure of N2 gas increases in the mixture between the inert gas and N2 gas in the TiN film. RF magnetron sputtering has the ability to reduce the creation of race track erosion on the surface of the target material, helps the target material reduce arcing due to charge accumulation with each cycle, provides excellent adhesion, and is very easy to control the deposition rate. In this study, we observed changes in TiN thin films on glass substrates with changes in N2 gas flow rate by RF magnetron sputtering. To investigate the structural and electrical properties of the thin film, the Ar flow rate was fixed at 50 sccm and N2 gas flow rates were applied at various rates, and the structural and electrical properties of the thin film were analyzed by observing changes in the growth direction.
Abstract
TiN has been attracting attention as an attractive material in many research fields due to its low cost, high melting point (about 3000°C), high mechanical hardness, high electrical conductivity (>105 S/m), chemical stability, and corrosion resistance. TiN thin films are generally formed using various deposition methods. However, in most methods, the Ti/N ratio and growth direction change significantly as the pressure of N2 gas increases in the mixture between the inert gas and N2 gas in the TiN film. RF magnetron sputtering has the ability to reduce the creation of race track erosion on the surface of the target material, helps the target material reduce arcing due to charge accumulation with each cycle, provides excellent adhesion, and is very easy to control the deposition rate. In this study, we observed changes in TiN thin films on glass substrates with changes in N2 gas flow rate by RF magnetron sputtering. To investigate the structural and electrical properties of the thin film, the Ar flow rate was fixed at 50 sccm and N2 gas flow rates were applied at various rates, and the structural and electrical properties of the thin film were analyzed by observing changes in the growth direction.
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