MoS2-based Ultra-Low-Power NH3 Gas Sensor with Room-Temperature Operation
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An ultra-low-power gas sensor to detect NH3 gas of 10 ppm concentration is designed and built. Four-inch waferscaleformation of a two-layer MoS2 film is achieved using metal-organic chemical vapor deposition. Raman spectroscopy and transmissionelectron microscopy analyses show that a two-layer MoS2 film is uniformly formed on a four-inch wafer. A 250-nanometerwideMoS2 flake is uniformly formed on the wafer, and the MoS2 film is used as a gas sensor for sensing of 10 ppm NH3 gas atroom temperature. The operation power of the gas sensor is below 10 nW because its operation current is in the nano-ampere range. Hence, the gas sensor can be operated for longer than one year even with a low-capacity battery. Therefore, the developed sensoris highly suitable for Internet of Things and Internet of Small Things applications.
Abstract
An ultra-low-power gas sensor to detect NH3 gas of 10 ppm concentration is designed and built. Four-inch waferscaleformation of a two-layer MoS2 film is achieved using metal-organic chemical vapor deposition. Raman spectroscopy and transmissionelectron microscopy analyses show that a two-layer MoS2 film is uniformly formed on a four-inch wafer. A 250-nanometerwideMoS2 flake is uniformly formed on the wafer, and the MoS2 film is used as a gas sensor for sensing of 10 ppm NH3 gas atroom temperature. The operation power of the gas sensor is below 10 nW because its operation current is in the nano-ampere range. Hence, the gas sensor can be operated for longer than one year even with a low-capacity battery. Therefore, the developed sensoris highly suitable for Internet of Things and Internet of Small Things applications.