Akhiezer 소산이 실리콘 박막 소자 내 나노 크기 국부 발열에 의한 열저항에 미치는 영향에 대한 수치적 연구
Numerical Study on the Effect of Akhiezer Damping on Thermal Resistance Induced by Nanoscale Local Heating in Silicon-on-Insulator Transistors
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Abstract : This study numerically analyzed the effect of Akhiezer damping (AKH) on the thermal resistance of a thin silicon (Si) layer in Silicon-on-Insulator (SOI) transistors under nanoscale heat generation (i.e., hotspot). Using the Gray approximation of the Boltzmann transport equation, phonon ballistic transport was considered in a structure with a 72 nm Si layer on a 243 nm SiO2 layer, with heating in a 100×10 nm2 region. Three cases were compared: Case I (no temperature dependence of phonon properties), Case II (temperature dependence considered), and Case III (AKH effect included in Case II). Results showed that the AKH effect caused less than a 10% increase in thermal resistance for volumetric heat generation (qv) between 1×1018 and 7×1018 W/m3. However, at qv = 10×1018 W/m3, AKH led to over a 50% increase in thermal resistance within 2.5% of the phonon transport distance from the heat source, with a maximum increase of 127.4% at the boundary adjacent to the heating region.
Abstract
Abstract : This study numerically analyzed the effect of Akhiezer damping (AKH) on the thermal resistance of a thin silicon (Si) layer in Silicon-on-Insulator (SOI) transistors under nanoscale heat generation (i.e., hotspot). Using the Gray approximation of the Boltzmann transport equation, phonon ballistic transport was considered in a structure with a 72 nm Si layer on a 243 nm SiO2 layer, with heating in a 100×10 nm2 region. Three cases were compared: Case I (no temperature dependence of phonon properties), Case II (temperature dependence considered), and Case III (AKH effect included in Case II). Results showed that the AKH effect caused less than a 10% increase in thermal resistance for volumetric heat generation (qv) between 1×1018 and 7×1018 W/m3. However, at qv = 10×1018 W/m3, AKH led to over a 50% increase in thermal resistance within 2.5% of the phonon transport distance from the heat source, with a maximum increase of 127.4% at the boundary adjacent to the heating region.