Superhard SiC Thin Films with a Microstructure of Nanocolumnar Crystalline Grains and an Amorphous Intergranular Phase
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Silicon carbide (SiC) thin films become superhard when they have microstructures of nanocolumnar crystallinegrains (NCCG) with an intergranular amorphous SiC matrix. We investigated the role of ion bombardmentand deposition temperature in forming the NCCG in SiC thin films. A direct-current (DC) unbalanced magnetronsputtering method was used with pure Ar as sputtering gas to deposit the SiC thin films at fixed targetpower of 200 W and chamber pressure of 0.4 Pa. The Ar ion bombardment of the deposited films wasconducted by applying a negative DC bias voltage 0-100 V to the substrate during deposition. The depositiontemperature was varied between room temperature and 450°C. Above a critical bias voltage of -80 V, theNCCG formed, whereas, below it, the SiC films were amorphous. Additionally, a minimum thermal energy(corresponding to a deposition temperature of 450°C in this study) was required for the NCCG formation. Transmission electron microscopy, Raman spectroscopy, and glancing angle X-ray diffraction analysis (GAXRD)were conducted to probe the samples’ structural characteristics. Of those methods, Raman spectroscopywas a particularly efficient non-destructive tool to analyze the formation of the SiC NCCG in the film,whereas GAXRD was insufficiently sensitive.
Abstract
Silicon carbide (SiC) thin films become superhard when they have microstructures of nanocolumnar crystallinegrains (NCCG) with an intergranular amorphous SiC matrix. We investigated the role of ion bombardmentand deposition temperature in forming the NCCG in SiC thin films. A direct-current (DC) unbalanced magnetronsputtering method was used with pure Ar as sputtering gas to deposit the SiC thin films at fixed targetpower of 200 W and chamber pressure of 0.4 Pa. The Ar ion bombardment of the deposited films wasconducted by applying a negative DC bias voltage 0-100 V to the substrate during deposition. The depositiontemperature was varied between room temperature and 450°C. Above a critical bias voltage of -80 V, theNCCG formed, whereas, below it, the SiC films were amorphous. Additionally, a minimum thermal energy(corresponding to a deposition temperature of 450°C in this study) was required for the NCCG formation. Transmission electron microscopy, Raman spectroscopy, and glancing angle X-ray diffraction analysis (GAXRD)were conducted to probe the samples’ structural characteristics. Of those methods, Raman spectroscopywas a particularly efficient non-destructive tool to analyze the formation of the SiC NCCG in the film,whereas GAXRD was insufficiently sensitive.
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