High-temperature Oxidation of Nano-multilayered AlTiSiN Thin Films deposited on WC-based carbides
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Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN,and tetragonal Ti2N phases. Their oxidation characteristics were studied at 800 and 900°C for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the α-Al2O3-rich surface oxide layer, below which an (Al2O3, TiO2, SiO2)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.
Abstract
Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN,and tetragonal Ti2N phases. Their oxidation characteristics were studied at 800 and 900°C for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the α-Al2O3-rich surface oxide layer, below which an (Al2O3, TiO2, SiO2)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.
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