High-temperature Oxidation of the TiAlCrSiN Film Deposited on the Cemented Hard Carbide
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The TiAlCrSiN film was deposited on the WC-20%TiC-10%Co carbide, and its oxidation behavior was examined at 700-1000oC. It displayed relatively good oxidation resistance owing to the formation of TiO2, Al2O3, Cr2O3, and SiO2 up to 900oC. However, at 1000oC, the fast oxidation rate and partial oxidation of WC in the substrate led to the formation of the thick, fragile oxide scale.
Abstract
The TiAlCrSiN film was deposited on the WC-20%TiC-10%Co carbide, and its oxidation behavior was examined at 700-1000oC. It displayed relatively good oxidation resistance owing to the formation of TiO2, Al2O3, Cr2O3, and SiO2 up to 900oC. However, at 1000oC, the fast oxidation rate and partial oxidation of WC in the substrate led to the formation of the thick, fragile oxide scale.
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