Betavoltaic cells based on Si/wide-bandgap material heterojunctions: A hybrid MCNP-TCAD approach for radioisotope devices
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Betavoltaic batteries have emerged as a promising long-term power solution for applications requiring extreme miniaturization, remote operation, or operation in harsh environments, owing to their exceptional longevity, high energy density, and environmental stability. This study investigates a cost-effective heterojunction design combining silicon (Si) with wide bandgap materials (WBMs—GaP, GaN, ZnO, ZnSe, ZnTe, AlN, SiC) to enhance efficiency while leveraging silicon’s established fabrication processes. We evaluate key performance metrics using MCNP code for beta-particle energy deposition and carrier generation analysis, coupled with TCAD-3D simulations for semiconductor device modeling: short-circuit current, open-circuit voltage, and conversion efficiency. Our results reveal a significant efficiency improvement from 2.3 % (pure Si) to 5.5 % (AlN/Si heterojunction), with the highest open-circuit voltage (3.7V) achieved for AlN/Si and the maximum short-circuit current observed in pure Si junctions. Our hybrid computational approach, unreported in prior literature, ensures high accuracy by integrating radiation transport and semiconductor physics. Our WBM/Si hybrid structures show exciting improvements - they generate higher voltages and better withstand radiation, all while keeping silicon’s famous affordability and ease of integration. By carefully testing different material combinations, we have uncovered practical ways to boost betavoltaic performance.
Abstract
Betavoltaic batteries have emerged as a promising long-term power solution for applications requiring extreme miniaturization, remote operation, or operation in harsh environments, owing to their exceptional longevity, high energy density, and environmental stability. This study investigates a cost-effective heterojunction design combining silicon (Si) with wide bandgap materials (WBMs—GaP, GaN, ZnO, ZnSe, ZnTe, AlN, SiC) to enhance efficiency while leveraging silicon’s established fabrication processes. We evaluate key performance metrics using MCNP code for beta-particle energy deposition and carrier generation analysis, coupled with TCAD-3D simulations for semiconductor device modeling: short-circuit current, open-circuit voltage, and conversion efficiency. Our results reveal a significant efficiency improvement from 2.3 % (pure Si) to 5.5 % (AlN/Si heterojunction), with the highest open-circuit voltage (3.7V) achieved for AlN/Si and the maximum short-circuit current observed in pure Si junctions. Our hybrid computational approach, unreported in prior literature, ensures high accuracy by integrating radiation transport and semiconductor physics. Our WBM/Si hybrid structures show exciting improvements - they generate higher voltages and better withstand radiation, all while keeping silicon’s famous affordability and ease of integration. By carefully testing different material combinations, we have uncovered practical ways to boost betavoltaic performance.