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Precise Comparison of Two-dimensional Dopant Profi les Measured by Low-voltage Scanning Electron Microscopy and Electron Holography Techniques

양준모|김원|현문섭|유종호|곽노열|이충균
한국현미경학회 (Korean Society Of Microscopy)|2012.09|Applied Microscopy|제42권 제3호|pp. 158-163

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참고문헌

키워드

Electron holography2-dimensional dopant profilingp-n junctionLowvoltage scanning electron microscopy
주제분류자연과학일반

초록

Detailed comparison of low-voltage scanning electron microscopy and electron holography techniques for two-dimensional (2D) dopant profi ling was carried out with using the same multilayered p-n junction specimen. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profi le measurement can be increased through precise comparison of 2D profi les obtained from various microscopic techniques.

Abstract

Detailed comparison of low-voltage scanning electron microscopy and electron holography techniques for two-dimensional (2D) dopant profi ling was carried out with using the same multilayered p-n junction specimen. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profi le measurement can be increased through precise comparison of 2D profi les obtained from various microscopic techniques.

참고문헌 (17)

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