Cross-Sectional Transmission Electron Microscopy Specimen Preparation Technique by Backside Ar Ion Milling
2
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
Backside Ar ion milling technique for the preparation of cross-sectional transmission electron microscopy (TEM) specimens, and backside-ion milling combined with focused ion beam (FIB) operation for electron holography were introduced in this paper. The backside Ar ion milling technique offers advantages in preparing cross-sectional specimens having thin, smooth and uniform surfaces with low surface damages. The back-side ion milling combined with the FIB technique could be used to observe the two-dimensional p-n junction prof les in semiconductors with the sample quality suff cient for an electron holography study. These techniques have useful applications for accurate TEM analysis of the microstructure of materials or electronic devices such as arrayed hole patterns, three-dimensional integrated circuits, and also relatively thick layers (>1 µm).
Abstract
Backside Ar ion milling technique for the preparation of cross-sectional transmission electron microscopy (TEM) specimens, and backside-ion milling combined with focused ion beam (FIB) operation for electron holography were introduced in this paper. The backside Ar ion milling technique offers advantages in preparing cross-sectional specimens having thin, smooth and uniform surfaces with low surface damages. The back-side ion milling combined with the FIB technique could be used to observe the two-dimensional p-n junction prof les in semiconductors with the sample quality suff cient for an electron holography study. These techniques have useful applications for accurate TEM analysis of the microstructure of materials or electronic devices such as arrayed hole patterns, three-dimensional integrated circuits, and also relatively thick layers (>1 µm).
참고문헌 (14)
- Abrahams M S, "Cross-sectional specimens for transmission electron microscopy", J. Appl. Phys, 45, pp.3315~ (1974)
- Barna Á, "TEM sample preparation by ion milling", amorphization, 1999, pp.30, 267~276
- Chew N G, "The preparation of transmission electron microscope specimens from compound semiconductors by ion milling", Ultramicroscopy, 23, pp.175~198 (1987)
- Formanek P, "Specimen preparation for electron holography of semiconductor devices", Ultramicroscopy, 106, pp.365~375 (2006)
- Giannuzzi L A, "A review of focused ion beam milling techniques for TEM specimen preparation", Micron, 30, pp.197~204 (1999)
- John C B, "The preparation of cross-section specimens for transmission electron microscopy", J. Electron Microsc. Tech, 1, pp.53~61 (1984)
- Midgley P A, "An introduction to off-axis electron holography", Micron, 32, pp.167~184 (2001)
- Mkhoyan K A, "Direct determination of local lattice polarity in crystals", Science, 312, pp.1354~ (2006)
- Okuno H, "Sample preparation of GaN-based materials on a sapphire substrate for STEM analysis", J. Electron Microsc, 57, pp.1~5 (2008)
- Orloff J, "High Resolution Focused Ion Beams: FIB and Its Applications" (2003), Kluwer Academic
- Preble E A, "Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiC-based, cross-sectional TEM samples", Ultramicroscopy, 92, pp.256~271 (2002)
- Stevie F A, "Applications of focused ion beams in microelectronics production, design and development", Surf. Interface Anal, 23, pp.61~68 (1995)
- Traeholt C, "A reliable method of TEM cross section specimen preparation of YBCO fi lms on various substrates", Physica C, 306, pp.318~328 (1993)
- Yoo J H, "Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside-ion milling", J. Electron Microsc, 57, pp.13~18 (2008)