Quantitative Evaluation of Dislocation Density in Epitaxial GaAs Layer on Si Using Transmission Electron Microscopy
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Dislocation density and distribution in epitaxial GaAs layer on Si are evaluated quantitatively and effectively using image processing of transmission electron microscopy image. In order to evaluate dislocation density and distribution, three methods are introduced based on line-intercept, line-length measurement and our coding with line-scanning method. Our coding method based on line-scanning is used to detect the dislocations line-by-line effectively by sweeping a thin line with the width of one pixel. The proposed method has advances in the evaluation of dislocation density and distribution. Dislocations can be detected automatically and continuously by a sweeping line in the code. Variation of dislocation density in epitaxial GaAs films can be precisely analyzed along the growth direction on the film.
Abstract
Dislocation density and distribution in epitaxial GaAs layer on Si are evaluated quantitatively and effectively using image processing of transmission electron microscopy image. In order to evaluate dislocation density and distribution, three methods are introduced based on line-intercept, line-length measurement and our coding with line-scanning method. Our coding method based on line-scanning is used to detect the dislocations line-by-line effectively by sweeping a thin line with the width of one pixel. The proposed method has advances in the evaluation of dislocation density and distribution. Dislocations can be detected automatically and continuously by a sweeping line in the code. Variation of dislocation density in epitaxial GaAs films can be precisely analyzed along the growth direction on the film.
참고문헌 (6)
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