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Atom Probe Tomography를 이용한 나노 스케일의 조성분석: II. 전자소자 및 나노재료에서의 응용

Nano Scale Compositional Analysis by Atom Probe Tomography: II. Applications on Electronic Devices and Nano Materials

박찬경|정우영|방찬우|장동현|구길호
한국현미경학회 (Korean Society Of Microscopy)|2011.06|Applied Microscopy|제41권 제2호|pp. 89-98

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참고문헌

키워드

NanowireAtom probe tomographySi MOSFETInGaN Multi quantum wellDopant
주제분류자연과학일반

초록

Atom Probe Tomography는 원자 수준의 분해능으로 원소의위치 및 조성 정보를 3차원으로 제공해 주는 분석 장비이다. APT의 우수한 성능에도 불구하고 반도체 등, 저전도성 물질 분석에는 그 동안 적용이 어려웠다. 그러나 특정 시료 내 위치의시편을 가공할 수 있는 FIB 시편 제조법과 laser펄스를 이용한전계증발법의 개발로 APT의 분석 영역이 반도체에서 절연체까지 크게 확대 되고 있다. 본 논문에서는 최근에 적용되기 시작한MOS-FET, GaN LED, Si-Nanowire 등 전자소자에서의 APT분석응용사례에 대하여 살펴보았다.

Abstract

Atom Probe Tomography (APT) can provide 3-dimensional information such as position and chemical composition with atomic resolution. Despite the ability of this technique, APT could not be applied for poor conductive materials such as semiconductor. Recently APT has dramatically developed by applying the laser pulsing and combining with Focused Ion Beam (FIB). The invention and combination of these techniques make possible site-specific sample preparation and permit the investigation of various materials including insulators. In this paper, we introduced the recently achieved state of the art applications of APT focusing on Si based FET devices, LED devices, low dimensional materials.

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관련 논문AI추천

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