SEM/EDX, UV-Vis-NIR spectroscopy and refractive index studies of zinc oxide thin films
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We used sol-gel via spin-coating technique to prepare zinc oxide (ZnO) thin films on glass substrates under three differentconditions. SEM/EDX and UV-Vis-NIR spectroscopy characterizations were used to analyze the as-grown samples. Thesurface of all the films is homogeneous, has regular elongated grains and the thin films prepared consist of zinc and oxygenelements. In the wavelength region 200-800 nm, all the samples show high transparency (> 90%). The optical band gap valuesof the three corresponding ZnO layers were 3.2884, 3.3322 and 3.2985 eV respectively at 0.55 M, 0.75 M and 0.95 M conditionsand the refractive index values are ranging from 1.982 to 2.009. These properties obtained of the ZnO thin films prepared wereexamined depending on the precursor concentration conditions and are attractive for use in photovoltaic applications as abuffer layer in copper indium gallium di-selenide (Cu(In,Ga)Se2) solar cells
Abstract
We used sol-gel via spin-coating technique to prepare zinc oxide (ZnO) thin films on glass substrates under three differentconditions. SEM/EDX and UV-Vis-NIR spectroscopy characterizations were used to analyze the as-grown samples. Thesurface of all the films is homogeneous, has regular elongated grains and the thin films prepared consist of zinc and oxygenelements. In the wavelength region 200-800 nm, all the samples show high transparency (> 90%). The optical band gap valuesof the three corresponding ZnO layers were 3.2884, 3.3322 and 3.2985 eV respectively at 0.55 M, 0.75 M and 0.95 M conditionsand the refractive index values are ranging from 1.982 to 2.009. These properties obtained of the ZnO thin films prepared wereexamined depending on the precursor concentration conditions and are attractive for use in photovoltaic applications as abuffer layer in copper indium gallium di-selenide (Cu(In,Ga)Se2) solar cells
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