Thin film fabrication of CdS quantum dots on GaAs substrate by surfactant self-assembly
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In this study, cadmium sulfide (CdS) quantum dots (QDs) were synthesized using a microemulsion-based synthesis method,in which two microemulsions containing precursors of Cd2+ and S2-, were mixed to form CdS QDs. The time-course variationin the average particle size was measured by UV-visible absorption spectroscopy. Subsequently, a thin film of CdS QDs wasfabricated using a self-assembled monolayer (SAM) technique. First, undoped GaAs (100) wafers were cleaned and etchedusing HCl aqueous solution, and a SAM of 1,6-hexanedithiol was formed on the etched wafer surface using a typical SAMtechnique. Finally, CdS-dithiol-GaAs structures were fabricated by immersing the SAM-coated wafer in dispersion solutionsof CdS QDs. In the serial steps of the fabrication of CdS QD thin films, the wafer surface was analyzed, and thin filmformation was confirmed by contact angle measurement, atomic force microscopy (AFM), and X-ray photoelectronspectroscopy (XPS).
Abstract
In this study, cadmium sulfide (CdS) quantum dots (QDs) were synthesized using a microemulsion-based synthesis method,in which two microemulsions containing precursors of Cd2+ and S2-, were mixed to form CdS QDs. The time-course variationin the average particle size was measured by UV-visible absorption spectroscopy. Subsequently, a thin film of CdS QDs wasfabricated using a self-assembled monolayer (SAM) technique. First, undoped GaAs (100) wafers were cleaned and etchedusing HCl aqueous solution, and a SAM of 1,6-hexanedithiol was formed on the etched wafer surface using a typical SAMtechnique. Finally, CdS-dithiol-GaAs structures were fabricated by immersing the SAM-coated wafer in dispersion solutionsof CdS QDs. In the serial steps of the fabrication of CdS QD thin films, the wafer surface was analyzed, and thin filmformation was confirmed by contact angle measurement, atomic force microscopy (AFM), and X-ray photoelectronspectroscopy (XPS).
참고문헌 (28)
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