Controlling of the heterogeniously growing GaN polycrystals using a quartz ring in the edge during the HVPE-GaN bulk growth
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The outstanding characteristics of high quality GaN single crystal substrates make it possible to apply the manufacture of highbrightness light emitting diodes and power devices. However, it is very difficult to obtain high quality GaN substrate becausethe process conditions are hard to control. In order to effectively control the formation of GaN polycrystals during the bulkGaN single crystal growth by the HVPE (hydride vapor phase epitaxy) method, a quartz ring was introduced in the edge ofsubstrate. A variety of evaluating method such as high resolution X-ray diffraction, Raman spectroscopy andphotoluminescence was used in order to measure the effectiveness of the quartz ring. A secondary ion mass spectroscopy wasalso used for evaluating the variations of impurity concentration in the resulting GaN single crystal. Through the detailedinvestigations, we could confirm that the introduction of a quartz ring during the GaN single crystal growth process usingHVPE is a very effective strategy to obtain a high quality GaN single crystal.
Abstract
The outstanding characteristics of high quality GaN single crystal substrates make it possible to apply the manufacture of highbrightness light emitting diodes and power devices. However, it is very difficult to obtain high quality GaN substrate becausethe process conditions are hard to control. In order to effectively control the formation of GaN polycrystals during the bulkGaN single crystal growth by the HVPE (hydride vapor phase epitaxy) method, a quartz ring was introduced in the edge ofsubstrate. A variety of evaluating method such as high resolution X-ray diffraction, Raman spectroscopy andphotoluminescence was used in order to measure the effectiveness of the quartz ring. A secondary ion mass spectroscopy wasalso used for evaluating the variations of impurity concentration in the resulting GaN single crystal. Through the detailedinvestigations, we could confirm that the introduction of a quartz ring during the GaN single crystal growth process usingHVPE is a very effective strategy to obtain a high quality GaN single crystal.
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