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Effect of annealing temperature on the optical properties of a bulk GaN substrate

박재화|강효상|Joo Hyung Lee|Seung Hoon Lee|Nuri Oh|Hee Ae Lee|Seong Kuk Lee|Won Il Park
청정에너지연구소 (Clean-Energy Research Institute)|2020.10|Journal of Ceramic Processing Research|제21권 제5호|pp. 609-614|DOI 10.36410/jcpr.2020.21.5.609

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참고문헌

키워드

CrystallinityGallium nitrideResidual stressOptical propertyHydride vapor phase epitaxyDefect density.
주제분류재료공학

초록

Variation of optical properties in a bulk GaN substrate have experimentally investigated with respect to different annealingconditions of 700 - 1,000 oC. As-annealed GaN was characterized by scanning electron microscopy, photoluminescence, andRaman spectroscopy. The experimental results demonstrated that the crystallinity and internal residual compressive stress ofGaN are most effectively improved when heat-treated at 900 oC for three hours. The optical characteristics were also improvedby enhancing the quality of the GaN substrate by decreasing both the defect density and the residual stress. It was alsoconfirmed that the effect of the heat treatment was excellent given that impurities were effectively removed by this process.

Abstract

Variation of optical properties in a bulk GaN substrate have experimentally investigated with respect to different annealingconditions of 700 - 1,000 oC. As-annealed GaN was characterized by scanning electron microscopy, photoluminescence, andRaman spectroscopy. The experimental results demonstrated that the crystallinity and internal residual compressive stress ofGaN are most effectively improved when heat-treated at 900 oC for three hours. The optical characteristics were also improvedby enhancing the quality of the GaN substrate by decreasing both the defect density and the residual stress. It was alsoconfirmed that the effect of the heat treatment was excellent given that impurities were effectively removed by this process.

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