Crystal characteristics of bulk GaN single crystal grown by HVPE method with the increase of thickness
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Although GaN has been used in optical materials and power devices, the extent of its application is determined by the crystalquality. Bulk GaN has been reported to produce high-quality GaN. Therefore, it can be used in applications that require highqualitycrystals, such as high-brightness light-emitting diode, power devices, etc. We grew a 2-inch bulk GaN crystal, using thehydride vapor phase epitaxy (HVPE) method, on a sapphire substrate to a thickness of ~5 mm. X-ray diffraction (XRD) wasused to analyze the structure of GaN. Scanning electron microscopy (SEM) was used to measure the etch pits density (EPD)of GaN after wet chemical etching. In addition, high-resolution XRD (HR-XRD) and Raman spectrometry were employed forradius of curvature and residual strains measurements, respectively.
Abstract
Although GaN has been used in optical materials and power devices, the extent of its application is determined by the crystalquality. Bulk GaN has been reported to produce high-quality GaN. Therefore, it can be used in applications that require highqualitycrystals, such as high-brightness light-emitting diode, power devices, etc. We grew a 2-inch bulk GaN crystal, using thehydride vapor phase epitaxy (HVPE) method, on a sapphire substrate to a thickness of ~5 mm. X-ray diffraction (XRD) wasused to analyze the structure of GaN. Scanning electron microscopy (SEM) was used to measure the etch pits density (EPD)of GaN after wet chemical etching. In addition, high-resolution XRD (HR-XRD) and Raman spectrometry were employed forradius of curvature and residual strains measurements, respectively.
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