Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE)technique
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Polar and non-polar GaN was grown by the HVPE on various substrates and influence of polarity has been investigated. The 10 μm thickness GaN were grown by HVPE is along A-plane (1120), C-plane (0001) and M-Plane (1010) sapphire substrate respectively. Surface properties were observed by optical microscope and atomic force microscopy. High resolution X-ray diffraction (HR-XRD) confirms the wurtzite structure. The donor band exciton peak located at ~3.4 eV and also located yellow luminescence peak at 2.2 eV. The polarity of the GaN film has a strong influence on the morphology and the optical properties.
Abstract
Polar and non-polar GaN was grown by the HVPE on various substrates and influence of polarity has been investigated. The 10 μm thickness GaN were grown by HVPE is along A-plane (1120), C-plane (0001) and M-Plane (1010) sapphire substrate respectively. Surface properties were observed by optical microscope and atomic force microscopy. High resolution X-ray diffraction (HR-XRD) confirms the wurtzite structure. The donor band exciton peak located at ~3.4 eV and also located yellow luminescence peak at 2.2 eV. The polarity of the GaN film has a strong influence on the morphology and the optical properties.
참고문헌 (11)
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