Computer Simulation and Experimental Study on the Casting of Polycrystalline Si Wafer by Vacuum Casting Method
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Abstract
A vacuum casting method was attempted to produce cheap poly-Si wafers ready for solar cell fabrication without any cutting or slicing. However, the 5 × 5 cm2 lab scale cast poly-Si wafers contained high carrier concentrations, above 3 × 1017/cm3, and crystalline defects like grain boundaries and gas porosity. We carried out a set of vacuum casting experiment in order to identify the main sources of impurities during vacuum casting and investigated the impurities in the cast poly-Si wafers. The efficiency of the test solar cells fabricated on the cast poly-Si wafers was below 1.0% whereas the efficiency of the solar cell fabricated on the wafer sliced from starting Si was 5.5%. The low efficiency of the test cells was attributed to high carrier concentrations and gas porosity inside the cast poly-Si wafer.