Computer modeling of a multi-run growth technique for sapphire ribbons

Abstract

Multi-run growth is most commonly applied to provide a high yield of shaped crystals. The presence of several crystals in a melting zone and a radiative heat exchange between them pose difficulties in the optimization of the heat zone design and growth conditions. The trial-and-error experiments can hardly be applied because of high cost in terms of materials and time. Moreover, the presence of many parameters under consideration and their interaction make a tentative search a very arduous task. In this paper, the multi-run growth process for sapphire ribbons is studied on the basis of mathematical modeling and the optimized relationships are found.