논문KCI 등재
Growth of epitaxial silicon by hot-wall chemical vapor deposition (CVD) technique and its thermochemical analysis
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관련 논문AI추천
The effects of initial gas composition and pressure on the growth behavior of CVD SiC films최두진, Young-JinLee청정에너지연구소 · Journal of Ceramic Processing Research2002 · 제3권 제3호Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemical vapor depositionJu-HoonPark, Seong-JooJang한국결정성장학회 · 한국결정성장학회지2003 · 제13권 제6호Growth of nanocrystalline 3C-SiC a on Si substrate by Plasma-enhanced Chemical Vapor DepositionByung-MinKim, Dong-JinKim, Kwang-HoKim, Myung-ChangKang, Seog-YoungYoon청정에너지연구소 · Journal of Ceramic Processing Research2002 · 제3권 제2호The effect of the substrate on the growth of silicon carbide whiskers by chemical vapor depositionDongChanLim, DooJinChoi청정에너지연구소 · Journal of Ceramic Processing Research2002 · 제3권 제3호A study of growth properties of SiC whiskers at various temperatures and input gas ratios on different Si substrates최두진, Dong Chan Lim청정에너지연구소 · Journal of Ceramic Processing Research2004 · 제5권 제2호Thermodynamic analysis of the deposition process of SiC/C functionally gradient materials by CVD techniqueChinHoPark, HeeSubShin, JunHoLee, YooTaekKim한국결정성장학회 · 한국결정성장학회지2002 · 제12권 제2호
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