Growth of indium gallium nitride nanorod arrays by HVPE using indium metal

Abstract

This work demonstrates the properties of InGaN nanorod arrays with various In mole fractions by modified hydride vapor phase epitaxy (HVPE) method using In metal at a low growth temperature. The nanorods grown on (0001) sapphire substrates are preferentially oriented in the c-axis direction. We found that the In mole fractions in the nanorods linearly increased at x ≤ 0.1. However, In mole fractions slightly increased at x > 0.1 and then gradually saturated at x = 0.2. Cathodoluminescence (CL) spectra show strong blue emissions from 428 nm (x = 0.1, 2.89 eV) to 470 nm (x = 0.2, 2.64 eV) at room temperature. From this result, we found the fact that increasing the In mole fraction in the InGaN nanorod shifts the peak position of the CL spectrum emitted from InGaN nanorods to the low energy region.