Synthesis of Cu2ZnSnS4 thin film absorbers by sulfurizing dip-coated precursors
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Cu2ZnSnS4 (CZTS) thin films, a potential candidate for the absorber layers of solar cells, were successfully deposited on soda lime glass substrates by sulfurizing dip-coated precursors. This is a simple and low-cost process. In this method, the precursor films were obtained by several cycles of dipping and air-jet cutting to rinse the film and make it flat, followed by drying at 200οC for 15 minutes. The solutions that were used in the dipping process contained copper (II) acetate monohydrate, zinc (II) acetate dehydrate, tin (II) chloride dehydrate and thiourea, dissolved in a solution of water and ethanol (30% vol). By sulfurizing the precursors in Ar + H2S (5%) gas to prevent oxidation, a CZTS single phase can be obtained with a ratio of Cu/[Zn + Sn] = 0.89, Zn/Sn = 1.03 and S/metal = 1.01. The films had a band gap of about 1.5 eV and the absorption coefficient was higher than 104 cm-1. The electrical properties of the films were shown to be p-type semiconductors with a carrier concentration of 1018 cm-3. The films can be applied as the absorber layers in solar cells.
Abstract
Cu2ZnSnS4 (CZTS) thin films, a potential candidate for the absorber layers of solar cells, were successfully deposited on soda lime glass substrates by sulfurizing dip-coated precursors. This is a simple and low-cost process. In this method, the precursor films were obtained by several cycles of dipping and air-jet cutting to rinse the film and make it flat, followed by drying at 200οC for 15 minutes. The solutions that were used in the dipping process contained copper (II) acetate monohydrate, zinc (II) acetate dehydrate, tin (II) chloride dehydrate and thiourea, dissolved in a solution of water and ethanol (30% vol). By sulfurizing the precursors in Ar + H2S (5%) gas to prevent oxidation, a CZTS single phase can be obtained with a ratio of Cu/[Zn + Sn] = 0.89, Zn/Sn = 1.03 and S/metal = 1.01. The films had a band gap of about 1.5 eV and the absorption coefficient was higher than 104 cm-1. The electrical properties of the films were shown to be p-type semiconductors with a carrier concentration of 1018 cm-3. The films can be applied as the absorber layers in solar cells.
참고문헌 (12)
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