Cu_2ZnSnSe_4 Thin Films Preparation by Pulsed Laser Deposition Using Powder Compacted Target
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Cu_2ZnSnSe_4 thin films for solar absorber application were prepared by pulsed laser deposition of a synthesized Cu_2ZnSnSe_4 compound target. The film’s composition revealed that the deposited films possess an identical composition with the target material. Further film compositional control toward a stoichiometric composition was performed by optimizing substrate temperature, deposition time and target rotational speed. At the optimum condition,X-ray diffraction patterns of films showed that the films demonstrated polycrystalline stannite single phase with a high degree of (112) preferred orientation. The absorption coefficient of Cu_2ZnSnSe_4 thin films were above 104 cm^(−1) with a band gap of 1.45 eV. At an optimum condition, films were identified as a p type semiconductor characteristic with a resistivity as low as 10^(−1) Ωcm and a carrier concentration in the order of 10^(17) cm^(−3).
Abstract
Cu_2ZnSnSe_4 thin films for solar absorber application were prepared by pulsed laser deposition of a synthesized Cu_2ZnSnSe_4 compound target. The film’s composition revealed that the deposited films possess an identical composition with the target material. Further film compositional control toward a stoichiometric composition was performed by optimizing substrate temperature, deposition time and target rotational speed. At the optimum condition,X-ray diffraction patterns of films showed that the films demonstrated polycrystalline stannite single phase with a high degree of (112) preferred orientation. The absorption coefficient of Cu_2ZnSnSe_4 thin films were above 104 cm^(−1) with a band gap of 1.45 eV. At an optimum condition, films were identified as a p type semiconductor characteristic with a resistivity as low as 10^(−1) Ωcm and a carrier concentration in the order of 10^(17) cm^(−3).
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