Characterization of CuIn1-xGaxSe2 films prepared by spin-coating and co-reduction method
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CuIn1-xGaxSe2 film has excellent photovoltaic performance due to its large optical absorption coefficient and direct-band gap. It was prepared by spin-coating and chemical co-reduction method which is a simple and easy way with low cost in this work. The surface morphology of the product film was observed using scanning electron microscope (SEM). The absorbance curvesare measured by visible spectrophotometer. The phases of the samples were characterized by X-ray diffraction (XRD). It wasfound by phase analysis that prolonging the reaction time and increasing the reaction temperature were beneficial to thesample crystallization. With the doping concentration increasing, the surface morphology of CuIn1-xGaxSe2 films changed witha tendency from spherical crystals to rods. The effect of doping concentration on the resistivity is not particularly obvious. Asthe doping concentration increases, the resistivity will increase slightly; When x=1, the resistivity changes greatly, which maybe due to the poor film continuity. Their estimated band gaps of CuIn1-xGaxSe2 films are 1.25 eV, 1.3 eV, 1.33 eV, 1.38 eV and1.4 eV respectively.
Abstract
CuIn1-xGaxSe2 film has excellent photovoltaic performance due to its large optical absorption coefficient and direct-band gap. It was prepared by spin-coating and chemical co-reduction method which is a simple and easy way with low cost in this work. The surface morphology of the product film was observed using scanning electron microscope (SEM). The absorbance curvesare measured by visible spectrophotometer. The phases of the samples were characterized by X-ray diffraction (XRD). It wasfound by phase analysis that prolonging the reaction time and increasing the reaction temperature were beneficial to thesample crystallization. With the doping concentration increasing, the surface morphology of CuIn1-xGaxSe2 films changed witha tendency from spherical crystals to rods. The effect of doping concentration on the resistivity is not particularly obvious. Asthe doping concentration increases, the resistivity will increase slightly; When x=1, the resistivity changes greatly, which maybe due to the poor film continuity. Their estimated band gaps of CuIn1-xGaxSe2 films are 1.25 eV, 1.3 eV, 1.33 eV, 1.38 eV and1.4 eV respectively.
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