Effect of different abrasive grain sizes of the diamond grinding wheel on the surface characteristics of GaN
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Gallium nitride (GaN) substrates were ground in two different grinding wheel abrasive sizes of 270 and 800-mesh, and thechange in surface morphologies of the substrates and the depth of subsurface damage (SSD) were observed. With the 800-meshgrinding wheel, the surface roughness (SR) and the depth of SSD of the sample tended to decrease, which was not the casewith the 270-mesh grinding wheel. In the X-ray rocking curve, the sample exhibited some compressive stress with the 270-meshgrinding wheel, but with the 800-mesh grinding wheel, it demonstrated the occurrence of tensile stresses in the sample and adecrease in full width at half maximum (FWHM), which confirms an improvement in the crystallinity. In the Raman spectra,the compressive stress of the 270-mesh grinding wheel and the tensile stress of the 800-mesh grinding wheel were confirmedthrough peak shifts. Photoluminescence (PL) spectra confirmed that the intensity ratio of the yellow luminescence increasedat the 800-mesh grinding wheel, and a blue shift occurred further. These results indicate that the SR and the depth of SSDwere proportional to the abrasive grain size of the grinding wheel. At the same time, the increase in PL intensity at specificpeak positions indicates that the stress stemming from the grinding process was concentrated at the crystal surface. The abovemechanism is illustrated in a schematic diagram, which confirms the possibility of improving the grinding efficiency andsubsequent polishing processes in future applications.
Abstract
Gallium nitride (GaN) substrates were ground in two different grinding wheel abrasive sizes of 270 and 800-mesh, and thechange in surface morphologies of the substrates and the depth of subsurface damage (SSD) were observed. With the 800-meshgrinding wheel, the surface roughness (SR) and the depth of SSD of the sample tended to decrease, which was not the casewith the 270-mesh grinding wheel. In the X-ray rocking curve, the sample exhibited some compressive stress with the 270-meshgrinding wheel, but with the 800-mesh grinding wheel, it demonstrated the occurrence of tensile stresses in the sample and adecrease in full width at half maximum (FWHM), which confirms an improvement in the crystallinity. In the Raman spectra,the compressive stress of the 270-mesh grinding wheel and the tensile stress of the 800-mesh grinding wheel were confirmedthrough peak shifts. Photoluminescence (PL) spectra confirmed that the intensity ratio of the yellow luminescence increasedat the 800-mesh grinding wheel, and a blue shift occurred further. These results indicate that the SR and the depth of SSDwere proportional to the abrasive grain size of the grinding wheel. At the same time, the increase in PL intensity at specificpeak positions indicates that the stress stemming from the grinding process was concentrated at the crystal surface. The abovemechanism is illustrated in a schematic diagram, which confirms the possibility of improving the grinding efficiency andsubsequent polishing processes in future applications.
참고문헌 (39)
- H. P. Maruska, , Appl. Phys. Lett, 15, pp.327~329 (1969)
- A. S. Augustine Fletcher, , Superlattices Microstruct, 109, pp.519~537 (2017)
- E. Gu, , Thin Solid Films, 453-454, pp.462~466 (2004)
- F.K. Yam, "Gallium nitride: an overview of structural defects", pp.99~136 (2011), InTech
- J. D. D. Manchon, , Solid State Commun, 8, pp.1227~1231 (1970)
- H. Aida, , Appl. Surf. Sci, 292, pp.531~536 (2014)
- L. Zhang, , Appl. Surf. Sci, 514, pp.145957~ (2020)
- H. Lee, , J. Cryst. Growth, 326, pp.140~146 (2011)
- H. Aida, , Curr. Appl. Phys, 12, pp.41~46 (2012)
- 김경준, "Gallium Nitride 기판의 Mechanical Polishing시 다이아몬드 입자 크기에 따른 표면 Morphology의 변화", 한국정밀공학회지, 25(9), pp.32~37 (2008), 한국정밀공학회
- H. Aida, , J. Electrochem. Soc, 158, pp.1206~1212 (2011)
- J. Murata, , J. Electrochem. Soc, 159, pp.417~420 (2012)
- Hee Ae Lee, "Effect of annealing temperature on the optical properties of a bulk GaN substrate", Journal of Ceramic Processing Research, 21(5), pp.609~614 (2020), 청정에너지연구소[DOI]
- Jeong Jun Kim, "Influence of substrate surface-grinding on surface roughness of zirconia coatings fabricated by room temperature spray processing", Journal of Ceramic Processing Research, 21, pp.68~73 (2020), 청정에너지연구소[DOI]
- C. Sun, , Adv. Struct. Chem. Imaging, 5 (2019)
- D. Key, , Materials, 12, pp.1925~ (2019)
- J. H. Shim, , RSC Adv, 10, pp.21860~21866 (2020)
- V.V. Voronenkov, , 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering, January 2019, pp.833~837 (2019)
- M. Li, , Mater. Des, 180, pp.107985~ (2019)
- T. Y. Tang, , J. Appl. Phys, 105, pp.023501~ (2009)
- H. Harima, , J. Phys.: Condens. Matter, 14, pp.R967~R993 (2002)
- C. Röder, , J. Phys. D : Appl. Phys, 46, pp.285302~ (2013)
- G. Nootz, , Appl. Phys. Lett, 80, pp.1355~1357 (2002)
- Jae Hwa Park, "Crystal characteristics of bulk GaN single crystal grown by HVPE method with the increase of thickness", Journal of Ceramic Processing Research, 18(2), pp.93~97 (2017), 청정에너지연구소[DOI]
- 박재화, "Controlling of the heterogeniously growing GaN polycrystals using a quartz ring in the edge during the HVPE-GaN bulk growth", Journal of Ceramic Processing Research, 19(5), pp.439~443 (2018), 청정에너지연구소[DOI]
- J. Neugebauer, , Appl. Phys. Lett, 69, pp.503~505 (1996)
- D. M. Hofmann, , Phys. Rev. B, 52, pp.16702~16706 (1995)
- 정칠성, "Properties of Si doped (11-20) a-plane GaN grown with different buffer layers", Journal of Ceramic Processing Research, 15(2), pp.120~124 (2014), 청정에너지연구소[DOI]
- S. O. Kucheyev, , J. Appl. Phys, 91, pp.5867~5874 (2002)
- A. Watanabe, , J. Cryst. Growth, 128, pp.391~396 (1993)
- S. Malkin, , CIRP Ann, 45, pp.569~580 (1996)
- Q. Jiang, , Mater. Sci. Semicond. Process, 122, pp.105446~ (2021)
- A. Esmaeilzare, , Appl. Surf. Sci, 313, pp.67~75 (2014)
- S. Li, , J. Mater. Process. Technol, 205, pp.34~41 (2008)
- S. J. Eder, , Int. J. Mech. Sci, 194, pp.106186~ (2021)
- H. Y. Kim, , EPL, 96, pp.26004~ (2011)[DOI]
- M. A. Reshchikov, , J. Appl. Phys, 97, pp.5~19 (2005)
- Xundi Zhang, "Sub-surface Damage of Ultra-Thin Monocrystalline Silicon Wafer Induced by Dry Polishing", Electronic Materials Letters, 16(4), pp.355~362 (2020), 대한금속·재료학회[DOI]
- B. Zhang, , Int. J. Extreme Manuf, 1, pp.012007~ (2019)