고온 황 처리를 통해 제작한 SnS 박막의물성 연구
Study on Properties of SnS Thin Films Fabricated by High Temperature Sulfurization
0
조회
0
다운로드
1
인용
0
참고문헌
키워드
초록
Generally, the SnS absorber fabricated by a 2-step process of annealing sputtered a metal precursor by a rapid thermal process (RTP) requires a long sulfurization time due to the low sulfurization temperature of 200℃. In this study, sulfurization was performed at a high temperature of more than 400℃ to reduce the reaction time. The properties of the SnS films according to the sulfurization time and the temperature of S-soaking were investigated. The sputtered Sn precursors had a thickness of 400 nm on a 300 nm thick Mo back contact. The sulfurization process was carried out under the sulfur-rich conditions using sulfur powders and the multiple temperature profiles, which consisted of a S-soaking process and high temperature sulfurization. The experimental variables were the substrate temperature of S-soaking (280, 320℃) and the time of sulfurization (10, 20, 30 min). The S-soaking process allowed sulfur vapor to mix sufficiently with the Sn precursor layer. The sublimation phenomenon of sulfur from SnS2 and thereby the formation of Sn2S3 and SnS phases were observed systematically according to the S-soaking temperature, while the preferred orientation and the crystallinity of SnS phase varied with the sulfurization time.
Abstract
Generally, the SnS absorber fabricated by a 2-step process of annealing sputtered a metal precursor by a rapid thermal process (RTP) requires a long sulfurization time due to the low sulfurization temperature of 200℃. In this study, sulfurization was performed at a high temperature of more than 400℃ to reduce the reaction time. The properties of the SnS films according to the sulfurization time and the temperature of S-soaking were investigated. The sputtered Sn precursors had a thickness of 400 nm on a 300 nm thick Mo back contact. The sulfurization process was carried out under the sulfur-rich conditions using sulfur powders and the multiple temperature profiles, which consisted of a S-soaking process and high temperature sulfurization. The experimental variables were the substrate temperature of S-soaking (280, 320℃) and the time of sulfurization (10, 20, 30 min). The S-soaking process allowed sulfur vapor to mix sufficiently with the Sn precursor layer. The sublimation phenomenon of sulfur from SnS2 and thereby the formation of Sn2S3 and SnS phases were observed systematically according to the S-soaking temperature, while the preferred orientation and the crystallinity of SnS phase varied with the sulfurization time.
참고문헌 (12)
- D. C. Menezesa, "Synthesis, characterisation and thermal decomposition of tin (IV) dithiocarbamate derivatives – single source precursors for tin sulfide powders", Polyhedron, 23, pp.2103~ (2004)
- K. T. Ramakrishna Reddy, "Photovoltaic properties of SnS based solar cells", Sol.Energy Mater.Sol.Cells, 90, pp.3041~ (2006)
- Hidenori Noguchi, "Characterization of vacuumevaporated tin sulfide film for solar cell materials", Sol.Energy Mater.Sol.Cells, 35, pp.325~ (1994)
- G. Valiukonis, "Optical spectra and energy band structure of layer type A VI B IV compounds", Phys. Status Solidi B, 135, pp.299~ (1986)
- M. Parenteau, "Influence of temperature and pressure on the electronic transitions in SnS and SnSe semiconductors", Phys. Rev. B, 41, pp.5277~ (1990)
- W. Albers, "Investigations on SnS", J. Appl. Phys, 32, pp.2220~ (1961)
- R. C. Sharma, "The S-Sn (Sulfur-Tin)system", Bulletin of Alloy Phase Diagrams, 7, pp.269~ (1986)
- Feng Jiang, "Preparation and properties of SnS film grown by two-stage process", Applied Surface Science, 257, pp.4901~ (2011)
- V. Piacente, "Sublimation study of the tin sulphides SnS2, Sn2S3 and SnS", Journal of Alloys and Compounds, 177, pp.17~ (1991)
- K. T. Ramakrishna Reddy, "Structural studies of SnS films grown by a two-stage process", Materials Letters, 56, pp.108~ (2002)
- Prasert Sinsermsuksakul, "Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer", Appl. Phys. Lett, 102, pp.053901~ (2013)
- M. Sugiyamaa, "Band offset of SnS solar cell structure measured by X-ray photoelectron spectroscopy", Thin Solid Films, 519(21), pp.7429~ (2011)