스퍼터링법으로 제작한 CIGS 박막의 후열처리에 따른 물성 평가
Characteristic of the Sputtered CIGS Films in Relation to Heat Treatment Condition
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CIGS (Cu-In-Ga-Se) films were deposited on the Mo coated soda lime glass (Mo/SLG) by RF magnetron sputtering using a single sintered target with different chemical compositions. Heat treatment of the CIGS films were carried out under three different conditions, 1step (350oC for 2 hour and 550oC for 2 hour) and 2step (350oC for 1 hour and 550oC for 1 hour). In the case of CIGS films post-annealed on 2step method,grain size remarkably increased compared to other methods, indicating that chemical composition [Cu/(Ga+In) = 1] of CIGS films was same as CIGS target. After heat treatment by 2step method, band gap energy of the CIGS film deposited at RF 80 W showed 1.4 eV which is broadly similar to identical band gap energy (1.2 eV) of CIGS film prepared by evaporation method. Therefore, 2step heat treatment method could be expected to low temperature process.
Abstract
CIGS (Cu-In-Ga-Se) films were deposited on the Mo coated soda lime glass (Mo/SLG) by RF magnetron sputtering using a single sintered target with different chemical compositions. Heat treatment of the CIGS films were carried out under three different conditions, 1step (350oC for 2 hour and 550oC for 2 hour) and 2step (350oC for 1 hour and 550oC for 1 hour). In the case of CIGS films post-annealed on 2step method,grain size remarkably increased compared to other methods, indicating that chemical composition [Cu/(Ga+In) = 1] of CIGS films was same as CIGS target. After heat treatment by 2step method, band gap energy of the CIGS film deposited at RF 80 W showed 1.4 eV which is broadly similar to identical band gap energy (1.2 eV) of CIGS film prepared by evaporation method. Therefore, 2step heat treatment method could be expected to low temperature process.
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